Allicdata Part #: | SQD40N10-25_GE3-ND |
Manufacturer Part#: |
SQD40N10-25_GE3 |
Price: | $ 2.23 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 100V 40A TO252 |
More Detail: | N-Channel 100V 40A (Tc) 136W (Tc) Surface Mount TO... |
DataSheet: | SQD40N10-25_GE3 Datasheet/PDF |
Quantity: | 1000 |
2000 +: | $ 2.00425 |
Specifications
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252, (D-Pak) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 136W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3380pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 70nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 25 mOhm @ 40A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 40A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Description
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
<div class="transistor-fetmosfet-single"><h1>SQD40N10-25_GE3 Application Field and Working Principle</h1><p>SQD40N10-25_GE3 is a state-of-the-art MOSFET with extremely low on-state resistance and high breakdown voltage, making it an efficient and reliable choice for switching power supplies, motor control and robotics applications. Its low gate charge makes it ideal for high-speed switching while its fast switching times improve the overall efficiency of the system.</p><p>The MOSFET is a voltage-controlled device, meaning it relies on the voltage applied to a gate terminal to control the conductivity of the channel between the drain and the source. In the MOSFET, channel leakage current is normally small, and large currents can only pass when the gate voltage is equal to or higher than the threshold voltage and large voltages are applied.</p><p>SQD40N10-25_GE3 is an ideal MOSFET for applications where maximum switching speed is desired, as the gate capacitance is small and the switching times are very fast. Also, due to its low on-state resistance, it is particularly well suited for high-current applications, where minimum voltage drop across the device is required.</p><p>When properly used, SQD40N10-25_GE3 is an efficient and reliable solution for switching power supplies, motor control and robotics applications. Its low gate charge and fast switching time make it an ideal choice for highest switching speed requirements.</p></div>The specific data is subject to PDF, and the above content is for reference
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