Allicdata Part #: | SQD45N05-20L-GE3-ND |
Manufacturer Part#: |
SQD45N05-20L-GE3 |
Price: | $ 1.37 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 50V 50A TO252 |
More Detail: | N-Channel 50V 50A (Tc) 2.5W (Ta), 75W (Tc) Surface... |
DataSheet: | SQD45N05-20L-GE3 Datasheet/PDF |
Quantity: | 1000 |
2000 +: | $ 1.23628 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252, (D-Pak) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 75W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1800pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 43nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 18 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 50A (Tc) |
Drain to Source Voltage (Vdss): | 50V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SQD45N05-20L-GE3 is a 25V N-Channel MOSFET SoC (System on Chip) that provides enhanced levels of MOSFET performance.
The SQD45N05-20L-GE3 is a silicon-Gated MOSFET (SG-MOS) device, which uses a single MOSFET process technology to deliver high current-carrying capability, low on-resistance and low gate charge. The SG-MOS process makes the product suitable for use in a variety of applications, including switch-mode and high-power applications.
The SQD45N05-20L-GE3 is designed for a wide range of applications including Robot Controller, Servo Motor Driver, Car Power Supply and Stepper Motor Driver applications. The device can be used with microprocessors, memory controllers and application specific integrated circuits. The device is also suitable for other high-power applications that require a high level of control, such as load switches, DC-DC converters, motor controller and display applications.
The working principle of the SQD45N05-20L-GE3 consists of a gate (or signal) applied to the gate terminal of the MOSFET, which turns the device “on“ or “off“. The “on” state is achieved when the gate voltage is greater than the threshold voltage, and the “off” state is achieved when the gate voltage is lower than the threshold voltage. When the device is turned “on”, current will flow from the drain terminal to the source terminal according to Ohm’s law. The device also has the capability to limit the maximum current output by using additional circuitry. The gate voltage must be kept within safety limits to avoid damaging the MOSFET, which makes it important to select the proper gate resistor.
In addition, the SQD45N05-20L-GE3 has an output “body diode” that helps to protect the device by providing a path of smallest resistance for current flow in the reverse direction, when the device is turned “off“. This is achieved by the MOSFET switch being installed in a “reverse” configuration, which helps to prevent the device from being over-stressed by a higher reverse voltage. The device also features a maximum junction temperature of +150°C and an absolute maximum drain-source voltage of +25V, which makes it suitable for a number of applications with varying power requirements.
The SQD45N05-20L-GE3 is well suited for a wide range of applications in the power electronics field due to its high level of integration and its superior performance. The device can be used for switch mode and high power applications, as well as motor control and display applications. It is also suitable for applications that require a high level of control such as load switches, DC-DC converters and motor controllers. Furthermore, the SQD45N05-20L-GE3 has a small footprint, low on-resistance, low gate charge and a wide range of operating voltages, making it an excellent choice for many types of applications.
The specific data is subject to PDF, and the above content is for reference
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