SQD45N05-20L-GE3 Allicdata Electronics
Allicdata Part #:

SQD45N05-20L-GE3-ND

Manufacturer Part#:

SQD45N05-20L-GE3

Price: $ 1.37
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 50V 50A TO252
More Detail: N-Channel 50V 50A (Tc) 2.5W (Ta), 75W (Tc) Surface...
DataSheet: SQD45N05-20L-GE3 datasheetSQD45N05-20L-GE3 Datasheet/PDF
Quantity: 1000
2000 +: $ 1.23628
Stock 1000Can Ship Immediately
$ 1.37
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 75W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 18 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 50V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SQD45N05-20L-GE3 is a 25V N-Channel MOSFET SoC (System on Chip) that provides enhanced levels of MOSFET performance.

The SQD45N05-20L-GE3 is a silicon-Gated MOSFET (SG-MOS) device, which uses a single MOSFET process technology to deliver high current-carrying capability, low on-resistance and low gate charge. The SG-MOS process makes the product suitable for use in a variety of applications, including switch-mode and high-power applications.

The SQD45N05-20L-GE3 is designed for a wide range of applications including Robot Controller, Servo Motor Driver, Car Power Supply and Stepper Motor Driver applications. The device can be used with microprocessors, memory controllers and application specific integrated circuits. The device is also suitable for other high-power applications that require a high level of control, such as load switches, DC-DC converters, motor controller and display applications.

The working principle of the SQD45N05-20L-GE3 consists of a gate (or signal) applied to the gate terminal of the MOSFET, which turns the device “on“ or “off“. The “on” state is achieved when the gate voltage is greater than the threshold voltage, and the “off” state is achieved when the gate voltage is lower than the threshold voltage. When the device is turned “on”, current will flow from the drain terminal to the source terminal according to Ohm’s law. The device also has the capability to limit the maximum current output by using additional circuitry. The gate voltage must be kept within safety limits to avoid damaging the MOSFET, which makes it important to select the proper gate resistor.

In addition, the SQD45N05-20L-GE3 has an output “body diode” that helps to protect the device by providing a path of smallest resistance for current flow in the reverse direction, when the device is turned “off“. This is achieved by the MOSFET switch being installed in a “reverse” configuration, which helps to prevent the device from being over-stressed by a higher reverse voltage. The device also features a maximum junction temperature of +150°C and an absolute maximum drain-source voltage of +25V, which makes it suitable for a number of applications with varying power requirements.

The SQD45N05-20L-GE3 is well suited for a wide range of applications in the power electronics field due to its high level of integration and its superior performance. The device can be used for switch mode and high power applications, as well as motor control and display applications. It is also suitable for applications that require a high level of control such as load switches, DC-DC converters and motor controllers. Furthermore, the SQD45N05-20L-GE3 has a small footprint, low on-resistance, low gate charge and a wide range of operating voltages, making it an excellent choice for many types of applications.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "SQD4" Included word is 11
Part Number Manufacturer Price Quantity Description
SQD40131EL_GE3 Vishay Silic... -- 9558 MOSFET P-CHAN 40V D-S TO-...
SQD40081EL_GE3 Vishay Silic... 0.41 $ 1000 MOSFET P-CHAN 40V TO252P-...
SQD40031EL_GE3 Vishay Silic... 0.48 $ 1000 MOSFET P-CHAN 30VP-Channe...
SQD40061EL_GE3 Vishay Silic... 0.48 $ 1000 MOSFET P-CHAN 40VP-Channe...
SQD40P10-40L_GE3 Vishay Silic... -- 1000 MOSFET P-CHAN 100V TO252P...
SQD40N06-14L_GE3 Vishay Silic... -- 6000 MOSFET N-CH 60V 40AN-Chan...
SQD40030E_GE3 Vishay Silic... 0.53 $ 1000 MOSFET N-CHANNEL 40V TO25...
SQD45P03-12_GE3 Vishay Silic... -- 1000 MOSFET P-CH 30V 50A TO252...
SQD40N06-25L-GE3 Vishay Silic... 1.37 $ 1000 MOSFET N-CH 60V 30A TO252...
SQD45N05-20L-GE3 Vishay Silic... 1.37 $ 1000 MOSFET N-CH 50V 50A TO252...
SQD40N10-25_GE3 Vishay Silic... 2.23 $ 1000 MOSFET N-CH 100V 40A TO25...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics