![SQD40P10-40L_GE3 Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | SQD40P10-40L_GE3TR-ND |
Manufacturer Part#: |
SQD40P10-40L_GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CHAN 100V TO252 |
More Detail: | P-Channel 100V 38A (Tc) 136W (Tc) Surface Mount TO... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 136W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5540pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 144nC @ 10V |
Series: | Automotive, AEC-Q101, TrenchFET® |
Rds On (Max) @ Id, Vgs: | 40 mOhm @ 8.2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 38A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SQD40P10-40L_GE3 transistor is a single-gate MOSFET (Metal Oxide Semiconductor Field Effect Transistor) with a drain current of 40 A and a maximum power dissipation rating of 40W. It is generally used as an electronic switch in a variety of applications.
As a power MOSFET, the SQD40P10-40L_GE3 operates as a unipolar (single polarity) device, with the gate being the control element for the flow of electrons between the source and the drain. When no voltage is applied to the gate, no current flows, making this device suitable for use as a switch. When a voltage is applied to the gate, current will flow, turning it “on”.
The desirable features of the SQD40P10-40L_GE3 make it ideal for a variety of applications, from low voltage power supplies to switching power converters and motor control in systems such as factory automation, heating and cooling systems, photographic equipment, and home appliances. It has also been used in audio amplifier applications for its low on-state resistance, allowing for greater control over the signal. The MOSFET’s fast switching speed allows for minimal energy losses and increases the system’s overall efficiency.
The SQD40P10-40L_GE3 is constructed in a TO-263 package, a small surface-mountable component that is well-suited for applications in which space is at a premium. It is also resistant to static discharge, making it suitable for safely connected to a human body or sensitive digital components.
The SQD40P10-40L_GE3’s low gate capacitance and on-state resistance make it a great choice for applications that require low power consumption and high efficiency. In addition, its high drain-ground voltage makes it well-suited for high voltage switching, such as in DC power supply circuits. The device also offers a high ESD protections and is capable of interrupting high-frequency signals.
In short, the SQD40P10-40L_GE3 is an ideal choice for a variety of applications, thanks to its low gate capacitance, low on-state resistance, high drain-ground voltage, high ESD protection, and fast switching speed. It is highly reliable and versatile, making it an excellent choice for a wide range of electronic applications.
The specific data is subject to PDF, and the above content is for reference
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