Allicdata Part #: | SQD40N06-14L_GE3TR-ND |
Manufacturer Part#: |
SQD40N06-14L_GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 60V 40A |
More Detail: | N-Channel 60V 40A (Tc) 75W (Tc) Surface Mount TO-2... |
DataSheet: | SQD40N06-14L_GE3 Datasheet/PDF |
Quantity: | 6000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252AA |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 75W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2105pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 51nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 14 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 40A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SQD40N06-14L_GE3 is a single N-channel, low-side, logic level, standard gate, power MOSFET produced by Alpha & Omega Semiconductor. This MOSFET is available in lead (Pb) free, RoHS compliant package and ranges from 3m to 20m Ohm. It features a drain-to-source voltage rating of 40V, a 0.74V maximum gate-source voltage, and continuous drain current of 14 A (Tc=25°C). The SQD40N06-14L_GE3 is ideal for high-side switching applications such as Load switch, Audiophiles circuits, Uninterruptible power supplies, DC motor drives and Low on-state resistance.
The standard gate type MOSFETs are versatile semiconductor devices that are mainly used to control complex switching operations such as signal transfer in gate drivers, power management, and other applications. The SQD40N06-14L_GE3 MOSFET utilizes the principle of MOSFETs wherein the current is conducted via a thin resistive layer developed between the conducting terminals (Source and Drain) in order to avoid the possibility of a breakdown. This MOSFET is used to maintain a logic level signal which is exerted on its gate terminal. The primary difference between this MOSFET and its other counterparts is its capability to switch without the help of an external driver.
The working principle of this MOSFET is based on the concept of an insulated gate. In this case, the SQD40N06-14L_GE3 utilizes a low on-state resistance thin-film transistor to drive a channel of conducting electrons between a source and destination. This channel is controlled by the application of a voltage on its gate terminal, thereby resulting in the flow of carriers. When operating at a positive gate-source voltage, electrons are driven from the source to the drain resulting in a on-state. This on-state is maintained until a negative voltage is applied to the gate causing the MOSFET to switch off. This switching of the MOSFET is performed without the need of an external driver.
The SQD40N06-14L_GE3 is most suitable for low-side switching applications such as creating turn-on resistors. The MOSFET can also be used in the control of solenoids and motors. The ability to switch without an external driver means that the MOSFET is also applicable in audio circuit applications. Since this MOSFET has a low on-state resistance, it is ideal for reducing energy losses. Other applications that use this MOSFET include automotive and industrial systems, power supplies, and distributed power systems.
The SQD40N06-14L_GE3 is a single N-channel power MOSFET that provides excellent current handling capability and low on-state resistance. This MOSFET is used in a variety of applications that require low-side switching such as audio circuits, power supplies, motor controls and automotive systems etc. With its ability to switch without an external driver, this MOSFET is an ideal solution for applications requiring a reliable switching solution with efficient power handling capabilities.
The specific data is subject to PDF, and the above content is for reference
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