SQD45P03-12_GE3

Vgs(th) (Max) @ Id:	2.5V @ 250µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	TO-252, (D-Pak)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	71W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	3495pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	83nC @ 10V
Series:	Automotive, AEC-Q101, TrenchFET®
Rds On (Max) @ Id, Vgs:	10 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	50A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction to the SQD45P03-12_GE3

The SQD45P03-12_GE3 is an N-channel enhancement-mode power MOSFET. It is a versatile switch which can be used to control a wide variety of circuits. This device is well-suited for use in low-side switch applications in main and auxiliary power supplies.

Working Principle

The SQD45P03-12_GE3 operates on the principle of an insulated-gate bipolar transistor (IGBT). It consists of two components: an insulated gate (insulator) and a channel. The insulator acts as a barrier between the gate and the channel. When a voltage is applied to the gate, an electric field is created which, in turn, causes a flow of current through the channel. As the voltage is increased, the current in the channel also increases and this is the principle upon which the device operates.

Application Field

The SQD45P03-12_GE3 is well-suited for many applications including power amplifiers, power supply circuits, motor controls, and power switching. It can be used in both low- and high-power systems. It is also suitable for use in robotics applications, allowing for precise control of motors and actuators. In addition to its use in power switching, the SQD45P03-12_GE3 can also be used in data communication systems. The device is capable of transmitting and receiving data at high speeds, making it an ideal choice for applications such as Ethernet, DSL and ISDN.

Conclusion

The SQD45P03-12_GE3 is an efficient and versatile power MOSFET which is well-suited for use in a variety of applications. It operates on the principle of an insulated-gate bipolar transistor, allowing for precise control of current flow. It is capable of switching high- and low-power systems and is also suitable for use in data communication systems. In addition, its low on-state resistance allows it to be used in circuits where low power dissipation is desired.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description