Allicdata Part #: | SQD40N06-25L-GE3-ND |
Manufacturer Part#: |
SQD40N06-25L-GE3 |
Price: | $ 1.37 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 60V 30A TO252 |
More Detail: | N-Channel 60V 30A (Tc) Surface Mount TO-252, (D-P... |
DataSheet: | SQD40N06-25L-GE3 Datasheet/PDF |
Quantity: | 1000 |
2000 +: | $ 1.23628 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252, (D-Pak) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | -- |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1800pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 40nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 22 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 30A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SQD40N06-25L-GE3 MOSFET is a device that is widely used in power electronics applications. It is a bi-directional MOSFET, which means that it can be used for both switching and amplification. In this article, we will discuss the application fields of the SQD40N06-25L-GE3 MOSFET and the working principle behind it.
Application Fields:
The SQD40N06-25L-GE3 MOSFET is ideal for use in a variety of power electronics applications, due to its ability to handle up to 40 amps of continuous current and its low on-state resistance. It is typically used in applications such as DC-DC converters, motor controllers, grid-tied inverters, electronic loads, switching regulators, and power supplies. It is also suitable for high-frequency switching applications, due to its low input capacitance and fast switching speeds.
Working Principle:
The SQD40N06-25L-GE3 MOSFET is a three terminal device that consists of a source, gate and drain. The source electrode receives the current, while the gate electrode is used to control the flow of this current. When a voltage is applied to the gate electrode, it causes the MOSFET to conduct current from the source to the drain. In this way, the gate voltage can be used to control the amount of current flowing through the device. At low gate voltages, the device is said to be in cutoff mode, where no current is flowing. At higher gate voltages, the device is in linear mode, where there is a constant current flowing through the device.
The SQD40N06-25L-GE3 MOSFET also has an intrinsic body diode which serves as a built-in protection against reverse voltage. This diode is an inherent part of the structure of the device, and is always reverse-biased to act as a clamp to protect against any external circuits which may produce unwanted reverse bias. The source and drain of the MOSFET are typically biased with a voltage that ranges from 1 to 30 volts.
In addition to its typical applications, the SQD40N06-25L-GE3 MOSFET can also be used in analog amplifiers, low-side drivers, and voltage level shifters. It is also popular in industrial applications which require robust high-current switching, such as automotive engine control, power distribution, and power conversion systems.
Overall, the SQD40N06-25L-GE3 MOSFET is a versatile device that has great potential for use in power electronics applications. Its ability to control high currents with low on-state resistance, as well as its fast switching speeds and low input capacitance make it an ideal choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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