SQJQ900E-T1_GE3

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The SQJQ900E-T1_GE3 is a power MOSFET array primarily used for its high-current, high-voltage capabilities, as well as its outstanding thermal performances. It is designed with a very low on-resistance, making it suitable for use in applications such as battery chargers and DC-DC converters. As a dual power MOSFET, it is capable of both high-side and low-side control, making it suitable for a wide variety of high-current power-supply designs.

The process of manufacturing the SQJQ900E-T1_GE3 requires advanced semiconductor processes to create the MOSFET array. In particular, due to the high current capability of the device, it requires the etch of two dielectric layers of various thicknesses. This is followed by the implantation of source, drain and gate regions, which feature an enhanced doping profile for superior on and off characteristics. Finally, the metal drain and source caps are created, with each layer being thoroughly tested for reliability.

The principle of operation of the SQJQ900E-T1_GE3 is based on the phenomenon of metal-oxide semiconductor capacitance. When a voltage is applied to the gate, it creates an electrostatic field in the vicinity of the gate region, which is then transferred through the metal-oxide layer to the drain and source. This allows for the device to control the current through the source and drain, as the electrostatic field can modulate the charge distribution across the two terminals and therefore the overall current.

The applications of the SQJQ900E-T1_GE3 are quite varied and range from consumer electronics to industrial applications. This include applications such as electric vehicle (EV) traction motors, electric vehicle battery chargers, DC-AC inverters, UPS systems, and lighting systems, among many others. With its low on-resistance, high-current and high-voltage capabilities, it is also suitable for use in motor and power supply control units as well as electrical circuit protection devices.

In conclusion, the SQJQ900E-T1_GE3 is a dual power MOSFET array designed with a very low on-resistance and capable of high-current, high-voltage applications. This is achieved through the use of an advanced semiconductor etch and implant process, and the principle of operation is based on the phenomenon of metal-oxide semiconductor capacitance. It is suitable for a wide range of applications such as EV traction motors and power supply control units. With its excellent performance and reliability, it is sure to be a great option for many of your high-current, high-voltage needs.

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