Allicdata Part #: | SQJQ466E-T1_GE3TR-ND |
Manufacturer Part#: |
SQJQ466E-T1_GE3 |
Price: | $ 0.90 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 60V 200A POWERPAK8 |
More Detail: | N-Channel 60V 200A (Tc) 150W (Tc) Surface Mount Po... |
DataSheet: | SQJQ466E-T1_GE3 Datasheet/PDF |
Quantity: | 1000 |
2000 +: | $ 0.81572 |
Vgs(th) (Max) @ Id: | 3.5V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | PowerPAK® 8 x 8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 150W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 10210pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 180nC @ 10V |
Series: | Automotive, AEC-Q101, TrenchFET® |
Rds On (Max) @ Id, Vgs: | 1.9 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 200A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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.When it comes to the field and working principle of the SQJQ466E-T1_GE3, it stands out as a single MOSFET with key combination of current rating (66A), maximum drain source voltage range (100V), power dissipation (1.25W). It also exhibits such performance features as fast switching, low gate charge, and low on-resistance. In this article, we will discuss the application field and working principle of the SQJQ466E-T1_GE3, as well as a few of its features.
The SQJQ466E-T1_GE3 is a type of single n-channel enhancement MOSFET (EMOSFET). This type of MOSFET can be used for many applications where fast switching, low gate voltage is required. Specifically, the SQJQ466E-T1_GE3 can be used in applications such as drivers, logic gates, and amplifiers. The SQJQ466E-T1_GE3 can also be used in applications such as switching power supplies, DC/DC converters, synchronous rectifiers, and motor controls. These are just some of the applications where the SQJQ466E-T1_GE3 can be used.
Now that we know the possible application field of the SQJQ466E-T1_GE3, let’s take a look at its working principle. The working principle of the SQJQ466E-T1_GE3 relies on changing the channel resistance through the application of a voltage. This voltage is applied to the gate of the MOSFET. When no voltage is applied, the channel is closed and the MOSFET does not work. However, when the gate is supplied with a voltage, the channel opens and the current begins to flow. This is the way the MOSFET works.
The SQJQ466E-T1_GE3 also has a few features that separate it from other MOSFETs. For example, it has a low threshold voltage; this feature allows the MOSFET to be used in low-voltage applications. The SQJQ466E-T1_GE3 also has a very low gate capacitance. This helps to reduce the switching losses when switching at high frequencies. The SQJQ466E-T1_GE3 also has a fast turn-on speed, which makes it suitable for applications like power supplies and motor controllers. These features make the SQJQ466E-T1_GE3 a great choice for many types of applications.
In conclusion, the SQJQ466E-T1_GE3 is a single n-channel enhancement MOSFET that is ideal for applications where fast switching, low gate voltage and low capacitance are needed. It has a wide range of applications, and it can be used in motor controllers, logic gates, and power supplies. Its features such as a low threshold voltage and low gate capacitance make it the perfect choice for these types of applications. With its fast turn-on speed, the SQJQ466E-T1_GE3 can provide a steady and reliable current to a variety of devices.
The specific data is subject to PDF, and the above content is for reference
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