Allicdata Part #: | SQJQ100E-T1_GE3TR-ND |
Manufacturer Part#: |
SQJQ100E-T1_GE3 |
Price: | $ 0.97 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 40V 200A POWERPAK8 |
More Detail: | N-Channel 40V 200A (Tc) 150W (Tc) Surface Mount Po... |
DataSheet: | SQJQ100E-T1_GE3 Datasheet/PDF |
Quantity: | 1000 |
2000 +: | $ 0.88027 |
Vgs(th) (Max) @ Id: | 3.5V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | PowerPAK® 8 x 8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 150W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 14780pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 165nC @ 10V |
Series: | Automotive, AEC-Q101, TrenchFET® |
Rds On (Max) @ Id, Vgs: | 1.5 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 200A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SQJQ100E-T1_GE3 is a high output rating MOSFET consisting of a dual-gate Super FET, made with high performance, easy to understand features. It mainly consists of a Gallium Arsenide nanowire, Sillicon on Insulator (SOI) material and is tailored for usage in small to medium power applications.
The SQJQ100E-T1_GE3 MOSFET offers several benefits to its users in terms of reduction in power dissipation, improved transient performance, minimized gate charge and verifiable output ratings. It is capable of providing a very robust gate voltage, extremely low on-voltage, off-state leakage current and very high power dissipation. Thus, the component can easily handle medium power applications that involve switching with relatively low power ratings.
The working principle of the component is that it acts as an electrical switch which is basically used to control the flow of electric current from one point to another. It consists of a pair of dual-gates, one positive and one negative, which are connected to a channel of silicon material. When the voltage is applied to the positive gate, a field effect is generated which draws electrons from the edge of the channel towards the gate. This resultingly reduces the resistance of the channel and causes electric current to flow through it.
The SQJQ100E-T1_GE3 MOSFET is more commonly used in the UPS, data center, lighting control and other energy efficient electrical systems for its superior power-saving capability. This component can be used in power electronics to provide soft-start circuit, regulate voltage, current limitation, overload protection and reduce the system\'s switching losses. This component can also be used in a variety of other applications like controlling the speed of a step motor, or as a switch to control the direction of a motor.
The SQJQ100E-T1_GE3 MOSFET is a flexible, reliable and efficient power saving component. It can save a substantial amount of energy and can be used in a variety of applications. Furthermore, this component is extremely easy to understand and provides very reliable operation, making it a preferred choice for power management applications.
The specific data is subject to PDF, and the above content is for reference
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