SQJQ910EL-T1_GE3 Allicdata Electronics
Allicdata Part #:

SQJQ910EL-T1_GE3TR-ND

Manufacturer Part#:

SQJQ910EL-T1_GE3

Price: $ 0.76
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET 2 N-CH 100V POWERPAK8X8
More Detail: Mosfet Array 2 N-Channel (Dual) 100V 70A (Tc) 187W...
DataSheet: SQJQ910EL-T1_GE3 datasheetSQJQ910EL-T1_GE3 Datasheet/PDF
Quantity: 1000
2000 +: $ 0.69444
Stock 1000Can Ship Immediately
$ 0.76
Specifications
Series: Automotive, AEC-Q101, TrenchFET®
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 8.6 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2832pF @ 50V
Power - Max: 187W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 8 x 8 Dual
Supplier Device Package: PowerPAK® 8 x 8 Dual
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SQJQ910EL-T1_GE3 is a transistor array, also known as a Field-Effect Transistor (FET), that is designed to combine transistors into a single device. It is a compact, low-cost device designed to provide improved functionality, increased power dissipating capability, and enhanced reliability. This device is suitable for use in applications ranging from personal computing and communications to industrial automation and consumer audio/video equipment.

The SQJQ910EL-T1_GE3 consists of a N-channel enhancement-mode MOSFET and several matching components, such as resistors, capacitors, diodes, Zener diodes, as well as diodes and transistors. The device can be used in several applications, including signal transmission, power switching, noise suppression, and level shifting. The device can also be used in power management, such as battery charging and in high-speed switching applications.

The working principle behind the SQJQ910EL-T1_GE3 transistor array is based on the fact that MOSFETs are voltage-controlled devices. This means that when an external voltage is applied to the gate of the MOSFET, this causes a current to flow through the channel between the source and drain terminals of the device. This current can then be used for various switching and other electrical functions.

The SQJQ910EL-T1_GE3 provides several advantages over traditional transistors. For example, it requires fewer components, making it easier and cheaper to design and manufacture. Additionally, the device is able to dissipate higher power than traditional transistors, and it is more reliable due to its low drift characteristics. The SQJQ910EL-T1_GE3 is also smaller than traditional transistors, making it more suitable for applications where space is limited.

The SQJQ910EL-T1_GE3 can be used in several applications, including signal transmission and low-speed switching. The device can also be used for level shifting, noise suppression, and for controlling power supply voltages. It can also be used for driving loads and for protecting sensitive components from over-voltage or over-current conditions. This device is an ideal choice for use in applications that require increased reliability, enhanced power dissipation capabilities, and increased performance.

In conclusion, the SQJQ910EL-T1_GE3 is a versatile and reliable device that provides improved functionality, increased power dissipating capability, and enhanced reliability. It is suitable for use in applications ranging from personal computing and communications to industrial automation and consumer audio/video equipment. This device is an ideal choice for applications that require increased reliability, enhanced power dissipation capabilities, and increased performance.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "SQJQ" Included word is 14
Part Number Manufacturer Price Quantity Description
SQJQ402E-T1_GE3 Vishay Silic... 0.71 $ 1000 MOSFET N-CH 40V 200A POWE...
SQJQ100EL-T1_GE3 Vishay Silic... 0.97 $ 1000 MOSFET N-CH 40V 200A POWE...
SQJQ100E-T1_GE3 Vishay Silic... 0.97 $ 1000 MOSFET N-CH 40V 200A POWE...
SQJQ480E-T1_GE3 Vishay Silic... 0.97 $ 1000 MOSFET N-CHAN 80V POWERPA...
SQJQ410EL-T1_GE3 Vishay Silic... 0.97 $ 1000 MOSFET N-CH 40V 200A POWE...
SQJQ404E-T1_GE3 Vishay Silic... 0.9 $ 1000 MOSFET N-CHAN 40VN-Channe...
SQJQ466E-T1_GE3 Vishay Silic... 0.9 $ 1000 MOSFET N-CH 60V 200A POWE...
SQJQ906E-T1_GE3 Vishay Silic... 0.77 $ 1000 MOSFET 2 N-CH 40V POWERPA...
SQJQ906EL-T1_GE3 Vishay Silic... 0.84 $ 2000 MOSFET 2 N-CH 40V POWERPA...
SQJQ960EL-T1_GE3 Vishay Silic... 0.7 $ 4000 MOSFET 2 N-CH 60V POWERPA...
SQJQ904E-T1_GE3 Vishay Silic... 0.97 $ 1000 MOSFET 2 N-CH 40V POWERPA...
SQJQ910EL-T1_GE3 Vishay Silic... 0.76 $ 1000 MOSFET 2 N-CH 100V POWERP...
SQJQ980EL-T1_GE3 Vishay Silic... 0.77 $ 1000 MOSFET 2 N-CH 80V POWERPA...
SQJQ900E-T1_GE3 Vishay Silic... 0.77 $ 1000 MOSFET 2 N-CH 40V POWERPA...
Latest Products
AO4822L_101

MOSFET 2N-CH 30V 8AMosfet Array 2 N-Chan...

AO4822L_101 Allicdata Electronics
SI5944DU-T1-GE3

MOSFET 2N-CH 40V 6A 8PWRPAKMosfet Array ...

SI5944DU-T1-GE3 Allicdata Electronics
SI4973DY-T1-GE3

MOSFET 2P-CH 30V 5.8A 8SOICMosfet Array ...

SI4973DY-T1-GE3 Allicdata Electronics
NTMD6601NR2G

MOSFET 2N-CH 80V 1.1A 8SOICMosfet Array ...

NTMD6601NR2G Allicdata Electronics
BUK7K6R2-40E/CX

MOSFET 2N-CH 56LFPAKMosfet Array

BUK7K6R2-40E/CX Allicdata Electronics
PHN210,118

MOSFET 2N-CH 30V 8SOICMosfet Array 2 N-C...

PHN210,118 Allicdata Electronics