Allicdata Part #: | SQJQ910EL-T1_GE3TR-ND |
Manufacturer Part#: |
SQJQ910EL-T1_GE3 |
Price: | $ 0.76 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2 N-CH 100V POWERPAK8X8 |
More Detail: | Mosfet Array 2 N-Channel (Dual) 100V 70A (Tc) 187W... |
DataSheet: | SQJQ910EL-T1_GE3 Datasheet/PDF |
Quantity: | 1000 |
2000 +: | $ 0.69444 |
Series: | Automotive, AEC-Q101, TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 70A (Tc) |
Rds On (Max) @ Id, Vgs: | 8.6 mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 58nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 2832pF @ 50V |
Power - Max: | 187W |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | PowerPAK® 8 x 8 Dual |
Supplier Device Package: | PowerPAK® 8 x 8 Dual |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The SQJQ910EL-T1_GE3 is a transistor array, also known as a Field-Effect Transistor (FET), that is designed to combine transistors into a single device. It is a compact, low-cost device designed to provide improved functionality, increased power dissipating capability, and enhanced reliability. This device is suitable for use in applications ranging from personal computing and communications to industrial automation and consumer audio/video equipment.
The SQJQ910EL-T1_GE3 consists of a N-channel enhancement-mode MOSFET and several matching components, such as resistors, capacitors, diodes, Zener diodes, as well as diodes and transistors. The device can be used in several applications, including signal transmission, power switching, noise suppression, and level shifting. The device can also be used in power management, such as battery charging and in high-speed switching applications.
The working principle behind the SQJQ910EL-T1_GE3 transistor array is based on the fact that MOSFETs are voltage-controlled devices. This means that when an external voltage is applied to the gate of the MOSFET, this causes a current to flow through the channel between the source and drain terminals of the device. This current can then be used for various switching and other electrical functions.
The SQJQ910EL-T1_GE3 provides several advantages over traditional transistors. For example, it requires fewer components, making it easier and cheaper to design and manufacture. Additionally, the device is able to dissipate higher power than traditional transistors, and it is more reliable due to its low drift characteristics. The SQJQ910EL-T1_GE3 is also smaller than traditional transistors, making it more suitable for applications where space is limited.
The SQJQ910EL-T1_GE3 can be used in several applications, including signal transmission and low-speed switching. The device can also be used for level shifting, noise suppression, and for controlling power supply voltages. It can also be used for driving loads and for protecting sensitive components from over-voltage or over-current conditions. This device is an ideal choice for use in applications that require increased reliability, enhanced power dissipation capabilities, and increased performance.
In conclusion, the SQJQ910EL-T1_GE3 is a versatile and reliable device that provides improved functionality, increased power dissipating capability, and enhanced reliability. It is suitable for use in applications ranging from personal computing and communications to industrial automation and consumer audio/video equipment. This device is an ideal choice for applications that require increased reliability, enhanced power dissipation capabilities, and increased performance.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
SQJQ402E-T1_GE3 | Vishay Silic... | 0.71 $ | 1000 | MOSFET N-CH 40V 200A POWE... |
SQJQ100EL-T1_GE3 | Vishay Silic... | 0.97 $ | 1000 | MOSFET N-CH 40V 200A POWE... |
SQJQ100E-T1_GE3 | Vishay Silic... | 0.97 $ | 1000 | MOSFET N-CH 40V 200A POWE... |
SQJQ480E-T1_GE3 | Vishay Silic... | 0.97 $ | 1000 | MOSFET N-CHAN 80V POWERPA... |
SQJQ410EL-T1_GE3 | Vishay Silic... | 0.97 $ | 1000 | MOSFET N-CH 40V 200A POWE... |
SQJQ404E-T1_GE3 | Vishay Silic... | 0.9 $ | 1000 | MOSFET N-CHAN 40VN-Channe... |
SQJQ466E-T1_GE3 | Vishay Silic... | 0.9 $ | 1000 | MOSFET N-CH 60V 200A POWE... |
SQJQ906E-T1_GE3 | Vishay Silic... | 0.77 $ | 1000 | MOSFET 2 N-CH 40V POWERPA... |
SQJQ906EL-T1_GE3 | Vishay Silic... | 0.84 $ | 2000 | MOSFET 2 N-CH 40V POWERPA... |
SQJQ960EL-T1_GE3 | Vishay Silic... | 0.7 $ | 4000 | MOSFET 2 N-CH 60V POWERPA... |
SQJQ904E-T1_GE3 | Vishay Silic... | 0.97 $ | 1000 | MOSFET 2 N-CH 40V POWERPA... |
SQJQ910EL-T1_GE3 | Vishay Silic... | 0.76 $ | 1000 | MOSFET 2 N-CH 100V POWERP... |
SQJQ980EL-T1_GE3 | Vishay Silic... | 0.77 $ | 1000 | MOSFET 2 N-CH 80V POWERPA... |
SQJQ900E-T1_GE3 | Vishay Silic... | 0.77 $ | 1000 | MOSFET 2 N-CH 40V POWERPA... |
MOSFET 2N-CH 30V 8AMosfet Array 2 N-Chan...
MOSFET 2N-CH 40V 6A 8PWRPAKMosfet Array ...
MOSFET 2P-CH 30V 5.8A 8SOICMosfet Array ...
MOSFET 2N-CH 80V 1.1A 8SOICMosfet Array ...
MOSFET 2N-CH 56LFPAKMosfet Array
MOSFET 2N-CH 30V 8SOICMosfet Array 2 N-C...