SQJQ402E-T1_GE3 Allicdata Electronics
Allicdata Part #:

SQJQ402E-T1_GE3TR-ND

Manufacturer Part#:

SQJQ402E-T1_GE3

Price: $ 0.71
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 40V 200A POWERPAK8
More Detail: N-Channel 40V 200A (Tc) 150W (Tc) Surface Mount Po...
DataSheet: SQJQ402E-T1_GE3 datasheetSQJQ402E-T1_GE3 Datasheet/PDF
Quantity: 1000
2000 +: $ 0.64553
Stock 1000Can Ship Immediately
$ 0.71
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: PowerPAK® 8 x 8 Single
Supplier Device Package: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 150W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
Series: Automotive, AEC-Q101, TrenchFET®
Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SQJQ402E-T1_GE3 is a type of power MOSFET, located within the transistors family. MOSFET in general (Metal-Oxide-Semiconductor Field-Effect transistor) are semiconductor devices used to control and modulate the flow of current, voltage and power based on a small electric field. This specific model is an enhancement mode, N-channel device trough that uses silicon for its cylindrical insulation, applied for the production of energy savings in the home appliances and industrial applications.

From the power MOSFET family, the SQJQ402E-T1_GE3 is classified as single, having one control electrode, a gate, and two other electrodes, source and drain, to which electric current and voltage can be applied. The scaling logic is derived from the preference option that MOSFETs have for current travelling from source to drain due to their self-gating nature. This makes their energy use extremely ephemeral and makes them perfect for the energy save environments.

The gate functions based on capacitance principles, which makes the flow of electricity adjustable and regulated by the operator. The most common application for this kind of transistor, it can be for example a PWM circuit, where source, drain and Gate nodes interact adjusting the power out of the resistor, up to 14.8 Amps of current. PWM circuits are suitable for embedded systems, manufacturing and industrial automation.

By jumping to other electronics application fields we have the possibility of using the SQQJE402E-T1_GE3 to design smart switches, that are activated or deactivated due to the interaction of the gate, the source and the drain, through high MOSFET on-state resistance. And also to regulation of voltage and current where devices can be connected to regulate high loads, being able to dissipate up to 125 Watts of power.

Another possibility of bringing the application of SQQJE402E-T1_GE3 to the real world is to use it as base for servo motors, able to regulate high torque with the capability of stop and start, and also going reverse, which is good for robotics applications and some aerospace productions.

Finally, matrix of LEDs and bulbs, typical operational audio amplifiers, sound systems, power supplies and some motor control applications are also suitable for the SQJQ402E-T1_GE3, which offers a wide range of opportunities for energy savings.

The specific data is subject to PDF, and the above content is for reference

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