SQJQ410EL-T1_GE3 Allicdata Electronics
Allicdata Part #:

SQJQ410EL-T1_GE3TR-ND

Manufacturer Part#:

SQJQ410EL-T1_GE3

Price: $ 0.97
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 40V 200A POWERPAK8
More Detail: N-Channel 40V 200A (Tc) 150W (Tc) Surface Mount Po...
DataSheet: SQJQ410EL-T1_GE3 datasheetSQJQ410EL-T1_GE3 Datasheet/PDF
Quantity: 1000
2000 +: $ 0.88027
Stock 1000Can Ship Immediately
$ 0.97
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 150W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 14500pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V
Series: Automotive, AEC-Q101, TrenchFET®
Rds On (Max) @ Id, Vgs: 1.2 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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SQJQ410EL-T1_GE3 transistors are a type of Field-Effect Transistor (FET) that can be used in a wide range of applications. As its name suggests, the SQJQ410EL-T1_GE3 has a single gate, hence it is also referred to as a single-gate FET, while the integrated on-chip protection circuit helps provide added protection in certain situations. In this article, we shall discuss the application field and the working principle of the SQJQ410EL-T1_GE3.

Application Field

The SQJQ410EL-T1_GE3 is widely used as a switch in consumer electronics and small appliances. As it has a low on-resistance and small body, it is suitable for use in applications such as lighting and motor control. It can also be used as a complementary device in CMOS logic gates for digital application. Moreover, its relatively straight “handling characteristics”, high efficiency and low driving current are advantageous for its usage in security systems.

Working Principle of SQJQ410EL-T1_GE3

The SQJQ410EL-T1_GE3 is a voltage-controlled device, which means that its output is determined by the voltage applied to the gate input. When a negative voltage is applied at the gate, the flow of current between the source and drain terminals is switched off, which is known as the “off state”. On the other hand, when a positive voltage is applied at the gate, the current flow is switched on, which is known as the “on state”.

The control voltage threshold, i.e., the voltage at which conduction occurs, is largely determined by the junction between the gate and the semiconductor surface. This is known as the gate inversion layer, which is controlled by the magnitude and polarity of voltage applied to the gate.

The SQJQ410EL-T1_GE3 includes an integrated Schottky type of protection circuit. As its name suggests, this serves to protect the device from electrical overstress, which is a condition that occurs when the voltage or the current exceeds the specified limits of the device. The protection circuit ensures that the device is not damaged by excessive current or voltage that might be input.

Conclusion

The SQJQ410EL-T1_GE3 is a single-gate FET that can be used as a switch in consumer electronics and small appliances. Its low on-resistance and small body makes it suitable for various applications, while its integrated on-chip protection circuit helps provide added protection against electrical overstress. It is important to note that the control voltage thresholds determine the flow of current between the source and drain terminals, while the integrated protection circuit ensures that the device is not damaged by excessive input.

The specific data is subject to PDF, and the above content is for reference

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