Allicdata Part #: | SQJQ410EL-T1_GE3TR-ND |
Manufacturer Part#: |
SQJQ410EL-T1_GE3 |
Price: | $ 0.97 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 40V 200A POWERPAK8 |
More Detail: | N-Channel 40V 200A (Tc) 150W (Tc) Surface Mount Po... |
DataSheet: | SQJQ410EL-T1_GE3 Datasheet/PDF |
Quantity: | 1000 |
2000 +: | $ 0.88027 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | PowerPAK® 8 x 8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 150W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 14500pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 220nC @ 10V |
Series: | Automotive, AEC-Q101, TrenchFET® |
Rds On (Max) @ Id, Vgs: | 1.2 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 200A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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SQJQ410EL-T1_GE3 transistors are a type of Field-Effect Transistor (FET) that can be used in a wide range of applications. As its name suggests, the SQJQ410EL-T1_GE3 has a single gate, hence it is also referred to as a single-gate FET, while the integrated on-chip protection circuit helps provide added protection in certain situations. In this article, we shall discuss the application field and the working principle of the SQJQ410EL-T1_GE3.
Application Field
The SQJQ410EL-T1_GE3 is widely used as a switch in consumer electronics and small appliances. As it has a low on-resistance and small body, it is suitable for use in applications such as lighting and motor control. It can also be used as a complementary device in CMOS logic gates for digital application. Moreover, its relatively straight “handling characteristics”, high efficiency and low driving current are advantageous for its usage in security systems.
Working Principle of SQJQ410EL-T1_GE3
The SQJQ410EL-T1_GE3 is a voltage-controlled device, which means that its output is determined by the voltage applied to the gate input. When a negative voltage is applied at the gate, the flow of current between the source and drain terminals is switched off, which is known as the “off state”. On the other hand, when a positive voltage is applied at the gate, the current flow is switched on, which is known as the “on state”.
The control voltage threshold, i.e., the voltage at which conduction occurs, is largely determined by the junction between the gate and the semiconductor surface. This is known as the gate inversion layer, which is controlled by the magnitude and polarity of voltage applied to the gate.
The SQJQ410EL-T1_GE3 includes an integrated Schottky type of protection circuit. As its name suggests, this serves to protect the device from electrical overstress, which is a condition that occurs when the voltage or the current exceeds the specified limits of the device. The protection circuit ensures that the device is not damaged by excessive current or voltage that might be input.
Conclusion
The SQJQ410EL-T1_GE3 is a single-gate FET that can be used as a switch in consumer electronics and small appliances. Its low on-resistance and small body makes it suitable for various applications, while its integrated on-chip protection circuit helps provide added protection against electrical overstress. It is important to note that the control voltage thresholds determine the flow of current between the source and drain terminals, while the integrated protection circuit ensures that the device is not damaged by excessive input.
The specific data is subject to PDF, and the above content is for reference
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