| Allicdata Part #: | SQJQ100EL-T1_GE3TR-ND |
| Manufacturer Part#: |
SQJQ100EL-T1_GE3 |
| Price: | $ 0.97 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 40V 200A POWERPAK8 |
| More Detail: | N-Channel 40V 200A (Tc) 150W (Tc) Surface Mount Po... |
| DataSheet: |  SQJQ100EL-T1_GE3 Datasheet/PDF |
| Quantity: | 1000 |
| 2000 +: | $ 0.88027 |
| Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
| Package / Case: | 8-PowerTDFN |
| Supplier Device Package: | PowerPAK® 8 x 8 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 150W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 14500pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 220nC @ 10V |
| Series: | Automotive, AEC-Q101, TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 1.2 mOhm @ 20A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 200A (Tc) |
| Drain to Source Voltage (Vdss): | 40V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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Introduction
The SQJQ100EL-T1 GE3 is a single, N-channel power MOSFET designed specifically for use in switching applications. It is designed to provide high performance and superior levels of efficiency for a wide range of electrical products with power requirements between 10 – 100 watts.
Application Field
The SQJQ100EL-T1 GE3 is widely used in consumer electronics such as LED lighting, DC & AC power supplies and motor drives for a range of domestic and industrial applications, and can be used in medical device and other demanding equipment. The main applications for this MOSFET are:
- Switched-mode power supplies
- DC-DC converters
- General-purpose and automotive motor controls
- Lighting and illumination
- Audio and video switching and amplifiers
- Industrial automation, process control, and LED displays
- Home appliances and consumer electronics
Working Principle
The SQJQ100EL-T1 GE3 is a N-channel power MOSFET with a large gate area and low on-resistance. It uses an advanced, high voltage construction to improve the blocking capability of the device. The low on-resistance of the MOSFET allows for high current capability for both continuous and short duration applications. The design of the device allows for faster switching speeds and improved efficiency.
The N-channel MOSFET technology of the SQJQ100EL-T1 GE3 enables efficient switching operations in both hard and soft switching applications and can be used in applications that demand high reliability and low power consumption.
The SQJQ100EL-T1 GE3 also has a low reverse transfer capacitance, allowing for better transient response and reduced ringing. The combination of low capacitance and fast switching speeds makes the device ideal for high frequency and high speed applications.
Conclusion
The SQJQ100EL-T1 GE3 is a single, N-channel power MOSFET designed to provide high performance and superior levels of efficiency for applications with power requirements between 10 – 100 watts. Its low on-resistance and advanced construction enable efficient switching operations and improved efficiency. Fast switching speeds and low reverse transfer capacitance further provide better transient response and reduced ringing, ideal for high frequency and high speed applications.
The specific data is subject to PDF, and the above content is for reference
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