Allicdata Part #: | SQJQ906EL-T1_GE3TR-ND |
Manufacturer Part#: |
SQJQ906EL-T1_GE3 |
Price: | $ 0.84 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2 N-CH 40V POWERPAK8X8 |
More Detail: | Mosfet Array 2 N-Channel (Dual) 40V 160A (Tc) 187W... |
DataSheet: | SQJQ906EL-T1_GE3 Datasheet/PDF |
Quantity: | 2000 |
2000 +: | $ 0.76290 |
Series: | Automotive, AEC-Q101, TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 40V |
Current - Continuous Drain (Id) @ 25°C: | 160A (Tc) |
Rds On (Max) @ Id, Vgs: | 4.3 mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 45nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 3238pF @ 20V |
Power - Max: | 187W |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | PowerPAK® 8 x 8 Dual |
Supplier Device Package: | PowerPAK® 8 x 8 Dual |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The SQJQ906EL-T1_GE3 is a MOSFET array produced by a leader in power semiconductor technologies, Semitec. It is a most advanced vertical DMOS power transistor for use in a variety of applications, and its electro-mechanical parameters make it well-suited for power management usage.
Applications
The SQJQ906EL-T1_GE3 is used for a variety of applications that require power management. It is employed in electromechanical applications such as those used in audio systems, automotive electronics, telecom systems, power supplies, and other types of computers. It is also used in industrial and consumer-grade electronics, such as laser printers, washing machines, fans, and industrial remote payloads.
The SQJQ906EL-T1_GE3 features a design that allows it to operate at a much higher power level than most other transistors and power management ICs. It is a reliable device that features low power consumption, low-voltage threshold, a wide operating temperature range, and long-term reliability. These features make it suitable for a range of cost-effective power management purposes.
Working Principle
The SQJQ906EL-T1_GE3 is a MOSFET array, which is an advanced type of vertical DMOS power transistor. It comprises several MOSFET transistors that are connected in an array by a gate. This is an important feature, as each MOSFET in the array can act independently, and can be programmed to switch independently, providing ample flexibility in power management.
The SQJQ906EL-T1_GE3 has a specific structure that enables it to deliver a high current with low switching losses while staying reliable and stable. It also has efficient power handling capabilities, which minimizes overall power consumption. Furthermore, the MOSFET array possesses a low input capacitance, leading to a shortened turn-on time for the transistor.
In many applications, the array is configured as a linear regulator, where the input voltage is regulated by an external voltage reference. In this configuration, excess power is diverted to the load, which reduces the total power consumption of the system. Additionally, the regulator can be programmed to handle multiple loads simultaneously without derating.
Conclusion
The SQJQ906EL-T1_GE3 is a MOSFET array produced by Semitec. It is an advanced vertical DMOS power transistor designed for multiple power management applications, featuring low power consumption, low-voltage threshold, a wide operating temperature range, and long-term reliability. The array is usually configured as a linear regulator, where the input voltage is regulated by an external voltage reference. This reduces the total power consumption of the system, as well as providing efficient power handling capabilities.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
SQJQ402E-T1_GE3 | Vishay Silic... | 0.71 $ | 1000 | MOSFET N-CH 40V 200A POWE... |
SQJQ100EL-T1_GE3 | Vishay Silic... | 0.97 $ | 1000 | MOSFET N-CH 40V 200A POWE... |
SQJQ100E-T1_GE3 | Vishay Silic... | 0.97 $ | 1000 | MOSFET N-CH 40V 200A POWE... |
SQJQ480E-T1_GE3 | Vishay Silic... | 0.97 $ | 1000 | MOSFET N-CHAN 80V POWERPA... |
SQJQ410EL-T1_GE3 | Vishay Silic... | 0.97 $ | 1000 | MOSFET N-CH 40V 200A POWE... |
SQJQ404E-T1_GE3 | Vishay Silic... | 0.9 $ | 1000 | MOSFET N-CHAN 40VN-Channe... |
SQJQ466E-T1_GE3 | Vishay Silic... | 0.9 $ | 1000 | MOSFET N-CH 60V 200A POWE... |
SQJQ906E-T1_GE3 | Vishay Silic... | 0.77 $ | 1000 | MOSFET 2 N-CH 40V POWERPA... |
SQJQ906EL-T1_GE3 | Vishay Silic... | 0.84 $ | 2000 | MOSFET 2 N-CH 40V POWERPA... |
SQJQ960EL-T1_GE3 | Vishay Silic... | 0.7 $ | 4000 | MOSFET 2 N-CH 60V POWERPA... |
SQJQ904E-T1_GE3 | Vishay Silic... | 0.97 $ | 1000 | MOSFET 2 N-CH 40V POWERPA... |
SQJQ910EL-T1_GE3 | Vishay Silic... | 0.76 $ | 1000 | MOSFET 2 N-CH 100V POWERP... |
SQJQ980EL-T1_GE3 | Vishay Silic... | 0.77 $ | 1000 | MOSFET 2 N-CH 80V POWERPA... |
SQJQ900E-T1_GE3 | Vishay Silic... | 0.77 $ | 1000 | MOSFET 2 N-CH 40V POWERPA... |
MOSFET 2N-CH 30V 8AMosfet Array 2 N-Chan...
MOSFET 2N-CH 40V 6A 8PWRPAKMosfet Array ...
MOSFET 2P-CH 30V 5.8A 8SOICMosfet Array ...
MOSFET 2N-CH 80V 1.1A 8SOICMosfet Array ...
MOSFET 2N-CH 56LFPAKMosfet Array
MOSFET 2N-CH 30V 8SOICMosfet Array 2 N-C...