SQJQ480E-T1_GE3

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The SQJQ480E-T1_GE3 is a depletion-mode metal-oxide-semiconductor field-effect transistor (MOSFET) from a range of transistors manufactured by Diodes Incorporated. It is intended for use in low-side switching applications, such as driving inductive loads. This type of transistor is specifically targeted for the switchmode power supply (SMPS) market. As such, it has a range of features that make it ideal for this particular application.

SQJQ480E-T1_GE3 Application Field and Working Principle

MOSFETs are used extensively in SMPS application because they offer a number of advantages over other types of transistors, including lower switching losses, improved EMI performance, better power efficiency, and higher current carrying capability. The SQJQ480E-T1_GE3 is a depletion-mode MOSFET, which is a type of MOSFET specifically designed to allow low-side switching. This type of MOSFET has two distinct operating regions - depletion mode and enhancement mode - and the SQJQ480E-T1_GE3 can be used in both of them.

In depletion mode, the MOSFET is said to be “on” when the gate voltage is lower than the source voltage. When in this mode, the transistor will act as a resistive load and will resist any current that attempts to flow from the drain to the source. In this mode, the current flowing through the MOSFET is highly dependent on the gate voltage. A higher gate voltage will result in a higher drain-source resistance and a lower gate voltage will result in a lower drain-source resistance.

In enhancement mode, the MOSFET is said to be “on” when the gate voltage is higher than the source voltage. When in this mode, the MOSFET acts as an amplifier, allowing current to flow from the drain to the source. In this mode, the current flowing through the transistor is determined by the magnitude of the gate voltage. A higher gate voltage will result in a higher current flow and a lower gate voltage will result in a lower current flow.

The SQJQ480E-T1_GE3 has an on-resistance of 480 milliohms and an off-resistance of 1 gigaohm. It also has a maximum gate-to-source voltage of 20 volts, making it suitable for a wide range of applications. The device is also protected against electrostatic discharge (ESD) with a guarding voltage of 8 kilovolts. These features make it ideal for use in low-side switching applications, such as driving inductive loads.

The SQJQ480E-T1_GE3 is an ideal choice for a wide range of applications due to its features and performance. It can be used in both depletion-mode and enhancement-mode configurations, offering improved power efficiency and EMI performance. With a maximum gate-to-source voltage of 20 volts, it can be used to drive inductive loads without the need for additional protection. In addition, the device is protected against ESD with a guarding voltage of 8 kilovolts, allowing for reliable operation in even the harshest environments.

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