Allicdata Part #: | SQJQ906E-T1_GE3TR-ND |
Manufacturer Part#: |
SQJQ906E-T1_GE3 |
Price: | $ 0.77 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2 N-CH 40V POWERPAK8X8 |
More Detail: | Mosfet Array 2 N-Channel (Dual) 40V 95A (Tc) 50W S... |
DataSheet: | SQJQ906E-T1_GE3 Datasheet/PDF |
Quantity: | 1000 |
2000 +: | $ 0.69835 |
Series: | Automotive, AEC-Q101, TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 40V |
Current - Continuous Drain (Id) @ 25°C: | 95A (Tc) |
Rds On (Max) @ Id, Vgs: | 3.3 mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id: | 3.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 42nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 3600pF @ 20V |
Power - Max: | 50W |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | PowerPAK® 8 x 8 Dual |
Supplier Device Package: | PowerPAK® 8 x 8 Dual |
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The SQJQ906E-T1_GE3 transistor array is usually classified as one of the field effect transistors (FETs) with metal–oxide–semiconductor (MOSFET) structure. It is a three-terminal device that combines multiple similar transistors into one package. It offers high-speed performance and a variety of flexible feature solutions while reducing the space, number of devices, and power dissipations. The SQJQ906E-T1_GE3 transistor array also facilitates circuit design and helps users to reduce their total cost. It is applicable in a range of fields including power electronic products, converters, motor control, telecom systems and LED lighting.
The SQJQ906E-T1_GE3 has three pins namely the input terminal, output terminal or the drain (D), and the gate (G). The input terminal and output terminal both serve as an external connection wherein the input terminal is connected to the power source and the output terminal is commonly connected to the circuit load. The central part of the SQJQ906E-T1_GE3 is the gate or G port which is connected to a control circuit. This external connection can be used to control the on and off switching of the device. The control circuit determines the operation voltage of SQJQ906E-T1_GE3 which is the gate to source voltage (VGS).A high voltage VGS above the threshold voltage, the power source is connected to the output terminal and the SQJQ906E-T1_GE3 is said to be on. In contrast, when the VGS is below the threshold voltage, the power source is disconnected from output terminal and the SQJQ906E-T1_GE3 is considered as an off state.
The operation of the SQJQ906E-T1_GE3 transistor array can be further understood by observing first the device structure. SQJQ906E-T1_GE3 is composed of a vertical structure. It began with a flat semiconductor substrate where two metal contacts were etched. The first metal contact is called the source, the other metal contact is primarily called the drain. A special type of insulating material like an oxide is then applied to the semiconductor surface, thus isolating the two metal contacts. Lastly, a thin metal strip was deposited on top of the insulator as the control electrode or the gate. With this, the SQJQ906E-T1_GE3 has completed its basic structure and is now ready to take on various applications.
The external application of the SQJQ906E-T1_GE3 transistor array includes audio, power electronic products, converters and motor control applications. In audio applications, SQJQ906E-T1_GE3 can be used to control the power output. By varying the applied voltage to the gate, the output load can be adjusted and controlled. In power electronic products and converters, SQJQ906E-T1_GE3 is used to control the flow of electricity. A voltage applied on the gate can be used to open or close the circuit, thus allowing or limiting the flow of current. In motor control, the SQJQ906E-T1_GE3 is also popular for its ability to quickly change speeds, start or stop the motor.
Another application of the SQJQ906E-T1_GE3 is in telecommunication systems. Transistors are utilized in order to amplify or switch signals. To amplify the signals, SQJQ906E-T1_GE3 can be used as a current switch or amplifier through proper adjustment of the applied voltage to the gate. To switch signals, the SQJQ906E-T1_GE3 can be used to open and close circuits. With this, SQJQ906E-T1_GE3 can convert weak signals into strong ones and vice versa.
At present, the SQJQ906E-T1_GE3 transistor array is also being utilized in LED lighting applications. Its quick switching and current driving capabilities allows users to control the power output according to their needs. By varying the voltage of the gate, the output current can be adjusted and hence, the power output can be managed for optimized performance. This feature is a crucial element for LED lighting systems where power output must be sorted according to the changing environment. With the SQJQ906E-T1_GE3, users can now dynamically adjust the power output in order to achieve the desired light output level.
In conclusion, the SQJQ906E-T1_GE3 transistor array is a versatile device that has a wide range of applications. It helps to reduce the total power dissipation and number of external components needed. The versatility of SQJQ906E-T1_GE3 allows for dynamic adjustment of power outputs for its various applications. With the SQJQ906E-T1_GE3, products that require control of power outputs can now be achieved with ease and efficiency.
The specific data is subject to PDF, and the above content is for reference
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