SQM100N10-10_GE3 Allicdata Electronics
Allicdata Part #:

SQM100N10-10_GE3TR-ND

Manufacturer Part#:

SQM100N10-10_GE3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 100V 100A TO-263
More Detail: N-Channel 100V 100A (Tc) 375W (Tc) Surface Mount T...
DataSheet: SQM100N10-10_GE3 datasheetSQM100N10-10_GE3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 375W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 8050pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 185nC @ 10V
Series: Automotive, AEC-Q101, TrenchFET®
Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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SQM100N10-10_GE3 is a high quality and reliable single N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) from Super QBY. It is a popular choice for many applications due to its wide variety of uses and high performance. The key features of this chip include low voltage drive, high speed switching, and low on-state resistance.

The SQM100N10-10_GE3 is designed to be used in a wide variety of applications, including motor control, lighting, output power stages, and more. It features a very low on-state resistance of only 0.010 ohm, which makes it ideal for improved efficiency when used in motor control applications. Its maximum drain to source voltage of +/- 10 V also allows it to be used in many output power stages due to its high voltage tolerance. The chip also features a very fast switching speed of 6.5 V/ns, allowing it to be implemented in high frequency applications with relative ease.

The working principle of the SQM100N10-10_GE3 is based on the same principles as other single channel MOSFETs. It consists of a gate, a source, and a drain, each with a corresponding connection. The gate and the source provide a bias voltage depending on the application and the connected device. The drain connection is connected to the power source or load, and the source connection is connected to the grounding voltage. When a positive voltage is applied to the gate, electrons will be attracted to the gate and the resistance between the source and drain will decrease, allowing current to flow through. Conversely, when a negative voltage is applied to the gate, the attraction of the electrons will be weakened and the resistance between the source and the drain will increase, thus inhibiting current flow. By controlling the bias voltage, it is possible to control the resistance between the source and drain, thus controlling the current flow.

The SQM100N10-10_GE3 is an ideal choice for applications requiring fast switching and low on-state resistance. With its wide range of applications, small size, and high performance, it is becoming increasingly popular for many applications.

The specific data is subject to PDF, and the above content is for reference

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