Allicdata Part #: | SQM100N10-10_GE3TR-ND |
Manufacturer Part#: |
SQM100N10-10_GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 100V 100A TO-263 |
More Detail: | N-Channel 100V 100A (Tc) 375W (Tc) Surface Mount T... |
DataSheet: | SQM100N10-10_GE3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263 (D2Pak) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 375W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 8050pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 185nC @ 10V |
Series: | Automotive, AEC-Q101, TrenchFET® |
Rds On (Max) @ Id, Vgs: | 10.5 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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SQM100N10-10_GE3 is a high quality and reliable single N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) from Super QBY. It is a popular choice for many applications due to its wide variety of uses and high performance. The key features of this chip include low voltage drive, high speed switching, and low on-state resistance.
The SQM100N10-10_GE3 is designed to be used in a wide variety of applications, including motor control, lighting, output power stages, and more. It features a very low on-state resistance of only 0.010 ohm, which makes it ideal for improved efficiency when used in motor control applications. Its maximum drain to source voltage of +/- 10 V also allows it to be used in many output power stages due to its high voltage tolerance. The chip also features a very fast switching speed of 6.5 V/ns, allowing it to be implemented in high frequency applications with relative ease.
The working principle of the SQM100N10-10_GE3 is based on the same principles as other single channel MOSFETs. It consists of a gate, a source, and a drain, each with a corresponding connection. The gate and the source provide a bias voltage depending on the application and the connected device. The drain connection is connected to the power source or load, and the source connection is connected to the grounding voltage. When a positive voltage is applied to the gate, electrons will be attracted to the gate and the resistance between the source and drain will decrease, allowing current to flow through. Conversely, when a negative voltage is applied to the gate, the attraction of the electrons will be weakened and the resistance between the source and the drain will increase, thus inhibiting current flow. By controlling the bias voltage, it is possible to control the resistance between the source and drain, thus controlling the current flow.
The SQM100N10-10_GE3 is an ideal choice for applications requiring fast switching and low on-state resistance. With its wide range of applications, small size, and high performance, it is becoming increasingly popular for many applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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