Allicdata Part #: | SQM110P04-04L-GE3-ND |
Manufacturer Part#: |
SQM110P04-04L-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 40V 120A TO263 |
More Detail: | P-Channel 40V 120A (Tc) 375W (Tc) Surface Mount TO... |
DataSheet: | SQM110P04-04L-GE3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263 (D2Pak) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 375W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 13980pF @ 20V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 330nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 4 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The SQM110P04-04L-GE3 is a field-effect transistor (FET) used in various electronic applications. This FET belongs to the category of single junction transistors and is considered to be one of the most efficient and reliable transistors available on the market today. It is commonly used for switching and power amplifying applications.The transistors used in this FET have four terminals. These include the gate, source, drain, and body. The gate represents the controlling element of the transistor. The source is the location of the positive voltage which provides the electrical current for the transistor to operate. The drain is the destination point of the current. Finally, the body is the reference point for the circuit, and is usually connected to ground.The SQM110P04-04L-GE3 can be used for switching and power amplifying applications. It works by controlling the amount of current passing through it. When the gate is not activated, the source is connected to the drain, thus allowing the full current to flow through the circuit. When the gate is activated, the voltage of the source is directed towards either the source or drain, thus preventing a full current flow.The SQM110P04-04L-GE3 is widely used in industrial and automotive applications. These include applications such as controlling motors, pumps and relays, as well as in amplifying audio and video signals. The FET is also widely used in telecommunications and medical imaging applications.The SQM110P04-04L-GE3 is a sleek and versatile transistor with a variety of features. It has a high linearity and low noise, making it an ideal choice for high-precision applications. The FET is also highly reliable and durable and has a low on-resistance so that it can handle large currents.The SQM110P04-04L-GE3 is an excellent choice for many different applications. It is highly reliable, efficient and is capable of controlling a wide range of current. Its versatility and cost effectiveness make it a popular choice for many different applications. The FET is highly reliable and can handle large currents, making it an ideal choice for industrial and automotive applications. It is also an excellent choice for applications such as telecommunications and medical imaging.The SQM110P04-04L-GE3 is a powerful and reliable FET that is capable of providing precise control and amplifying capabilities. It is an excellent choice for many different applications and is capable of handling large currents with a low on-resistance.The SQM110P04-04L-GE3 is widely used in various electronic applications today. It is an efficient and reliable FET which can provide precise control and amplifying capabilities. Its versatility and reliability make it an ideal choice for many different applications, from industrial and automotive to telecommunications and medical imaging. Its high linearity and low noise make it suitable for high-precision applications. With its robust design and high performance capabilities, the SQM110P04-04L-GE3 is an excellent choice for many different applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
SQM100N10-10_GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 100V 100A TO-... |
SQM110P04-04L-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 40V 120A TO26... |
SQM1000A | Essentra Com... | 0.35 $ | 1000 | 1.50IN 16-18 GAUGE 3/8-16... |
SQM120P04-04L_GE3 | Vishay Silic... | 1.3 $ | 1000 | MOSFET P-CH 40V 120A TO-2... |
SQM120N06-3M5L_GE3 | Vishay Silic... | -- | 800 | MOSFET N-CH 60V 120A TO-2... |
SQM10250E_GE3 | Vishay Silic... | -- | 800 | MOSFET N-CHAN 250V TO-263... |
SQM120P06-07L_GE3 | Vishay Silic... | 1.3 $ | 4000 | MOSFET P-CH 60V 120A TO26... |
SQM120N04-1M7L_GE3 | Vishay Silic... | 1.23 $ | 800 | MOSFET N-CH 40V 120A TO26... |
SQM120N10-3M8_GE3 | Vishay Silic... | 1.37 $ | 800 | MOSFET N-CH 100V 120A TO2... |
SQM10SJB-0R1 | Yageo | 0.1 $ | 1000 | RES WW 10W 5% TH100 mOhms... |
SQM10SJB-0R11 | Yageo | 0.1 $ | 1000 | RES WW 10W 5% TH110 mOhms... |
SQM10SJB-0R12 | Yageo | 0.1 $ | 1000 | RES WW 10W 5% TH120 mOhms... |
SQM10SJB-0R13 | Yageo | 0.1 $ | 1000 | RES WW 10W 5% TH130 mOhms... |
SQM10SJB-0R15 | Yageo | 0.1 $ | 1000 | RES WW 10W 5% TH150 mOhms... |
SQM10SJB-0R16 | Yageo | 0.1 $ | 1000 | RES WW 10W 5% TH160 mOhms... |
SQM10SJB-0R18 | Yageo | 0.1 $ | 1000 | RES WW 10W 5% TH180 mOhms... |
SQM10SJB-0R2 | Yageo | 0.1 $ | 1000 | RES WW 10W 5% TH200 mOhms... |
SQM10SJB-0R22 | Yageo | 0.1 $ | 1000 | RES WW 10W 5% TH220 mOhms... |
SQM10SJB-0R24 | Yageo | 0.1 $ | 1000 | RES WW 10W 5% TH240 mOhms... |
SQM10SJB-0R27 | Yageo | 0.1 $ | 1000 | RES WW 10W 5% TH270 mOhms... |
SQM10SJB-0R3 | Yageo | 0.1 $ | 1000 | RES WW 10W 5% TH300 mOhms... |
SQM10SJB-0R33 | Yageo | 0.1 $ | 1000 | RES WW 10W 5% TH330 mOhms... |
SQM10SJB-0R36 | Yageo | 0.1 $ | 1000 | RES WW 10W 5% TH360 mOhms... |
SQM10SJB-0R39 | Yageo | 0.1 $ | 1000 | RES WW 10W 5% TH390 mOhms... |
SQM10SJB-0R43 | Yageo | 0.1 $ | 1000 | RES WW 10W 5% TH430 mOhms... |
SQM10SJB-0R47 | Yageo | 0.1 $ | 1000 | RES WW 10W 5% TH470 mOhms... |
SQM10SJB-0R51 | Yageo | 0.1 $ | 1000 | RES WW 10W 5% TH510 mOhms... |
SQM10SJB-0R56 | Yageo | 0.1 $ | 1000 | RES WW 10W 5% TH560 mOhms... |
SQM10SJB-0R62 | Yageo | 0.1 $ | 1000 | RES WW 10W 5% TH620 mOhms... |
SQM10SJB-0R68 | Yageo | 0.1 $ | 1000 | RES WW 10W 5% TH680 mOhms... |
SQM10SJB-0R75 | Yageo | 0.1 $ | 1000 | RES WW 10W 5% TH750 mOhms... |
SQM10SJB-0R82 | Yageo | 0.1 $ | 1000 | RES WW 10W 5% TH820 mOhms... |
SQM10SJB-0R91 | Yageo | 0.1 $ | 1000 | RES WW 10W 5% TH910 mOhms... |
SQM10SJB-100K | Yageo | 0.1 $ | 1000 | RES WW 10W 5% TH100 kOhms... |
SQM10SJB-100R | Yageo | 0.1 $ | 1000 | RES WW 10W 5% TH100 Ohms ... |
SQM10SJB-10K | Yageo | 0.1 $ | 1000 | RES WW 10W 5% TH10 kOhms ... |
SQM10SJB-10R | Yageo | 0.1 $ | 1000 | RES WW 10W 5% TH10 Ohms 5... |
SQM10SJB-110K | Yageo | 0.1 $ | 1000 | RES WW 10W 5% TH110 kOhms... |
SQM10SJB-110R | Yageo | 0.1 $ | 1000 | RES WW 10W 5% TH110 Ohms ... |
SQM10SJB-11K | Yageo | 0.1 $ | 1000 | RES WW 10W 5% TH11 kOhms ... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...