SQM120N04-1M7L_GE3 Discrete Semiconductor Products |
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Allicdata Part #: | SQM120N04-1M7L_GE3TR-ND |
Manufacturer Part#: |
SQM120N04-1M7L_GE3 |
Price: | $ 1.23 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 40V 120A TO263 |
More Detail: | N-Channel 40V 120A (Tc) 375W (Tc) Surface Mount TO... |
DataSheet: | SQM120N04-1M7L_GE3 Datasheet/PDF |
Quantity: | 800 |
800 +: | $ 1.10848 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 375W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 14606pF @ 20V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 285nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 1.7 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SQM120N04-1M7L_GE3 is an N-channel enhancement mode field effect transistor (FET). It is a type of transistor that utilizes electron flow to output an electrical Signals. FETs are commonly used in a variety of applications, especially in the field of power systems, and the SQM120N04-1M7L_GE3 is no exception. It is a highly capable device, providing superior performance in terms of both power capacity and speed.
The main function of the SQM120N04-1M7L_GE3 is to regulate and switch electrical current. The FET’s metal-oxide semiconductor (MOS) structure allows for a field of charge to regulate the movement of electrons from the source terminal to the drain terminal. The size of this field is determined by the voltage applied across the gate terminal, allowing it to act as a switch. Once enabled, the SQM120N04-1M7L_GE3 can tolerate a large range of input voltages and deliver high output current. This makes it an ideal device for high power applications, such as pre or post regulation of motor, solenoid and relay currents.
The SQM120N04-1M7L_GE3 is also capable of high-speed switching due to its built-in planar structure. This ensures a low power loss, meaning that it is able to switch with minimal time delay. This makes it well suited for use in applications that require high frequency switching, such as remote control receivers, RF amplification circuits, and motor speed controllers. In addition, the FET also allows for a high input impedance for improved signal integrity.
The SQM120N04-1M7L_GE3 is an efficient, reliable and versatile device, making it suitable for a wide range of applications. Its high power capacity and speed make it ideal for use in high power and high frequency switching circuits, and its ability to tolerate large voltage ranges makes it suitable for use in motor, solenoid and relay circuits. Furthermore, its high input impedance ensures good signal integrity. The SQM120N04-1M7L_GE3’s numerous features make it an excellent choice for power supply, motor control, and signal processing applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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SQM120P04-04L_GE3 | Vishay Silic... | 1.3 $ | 1000 | MOSFET P-CH 40V 120A TO-2... |
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