SQM120N06-3M5L_GE3 Allicdata Electronics
Allicdata Part #:

SQM120N06-3M5L_GE3TR-ND

Manufacturer Part#:

SQM120N06-3M5L_GE3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 60V 120A TO-220
More Detail: N-Channel 60V 120A (Tc) 375W (Tc) Surface Mount TO...
DataSheet: SQM120N06-3M5L_GE3 datasheetSQM120N06-3M5L_GE3 Datasheet/PDF
Quantity: 800
Stock 800Can Ship Immediately
Specifications
Series: Automotive, AEC-Q101, TrenchFET®
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 29A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 14700pF @ 25V
FET Feature: --
Power Dissipation (Max): 375W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Description

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The SQM120N06-3M5L_GE3 is a Single Logic NMOS transistor that is part of the SQM Series made by Infineon Technologies. It is designed to be used as an enhancement mode in high side and low side switch applications. This transistor is a static-controlled device that utilizes field-effect principle of action. It has been designed specifically for use in automotive applications and has a wide operating temperature range (-55°C to 150°C).

This transistor is a small and low resistance unit. It is constructed with a dielectric medium between the gate and the source and drain. This dielectric medium is the kernel of the transistor\'s operation during the logic-level-controlled switching on of the source-drain current. By changing the gate-source voltage, the transistor changes between two possible conditions: either cut-off (when the gate-source voltage is low) or enhanced (when the gate-source voltage is high).

The general purpose and main application field of SQM120N06-3M5L_GE3 transistors are automotive switches, motor protection circuits, load switching, current monitoring and light emitting diode (LED) control, among others. Due to its enhanced output capability, it can also be applied in integrated circuit (IC) applications such as power management ICs. The wide temperature range of this transistor allows it to be used in extreme conditions, such as extended operations in hot environments.

The SQM120N06-3M5L_GE3 has fast switching speeds, low on-state resistance and low power consumption, ensuring an improved performance and efficiency. Its low on-state resistance also helps to reduce power dissipation and thus, increases the overall power efficiency. Furthermore, it offers a wide range of input-output voltage level combinations, making it suitable for use in many different applications. Most importantly, this transistor is extremely reliable under both dynamic and static conditions.

Overall, the SQM120N06-3M5L_GE3 is a robust and reliable single logic NMOS transistor that is suitable for use in a wide range of automotive and industrial applications. It has a wide temperature range, low on-state resistance, fast switching speed, and low power consumption, which makes it a highly efficient and reliable device for use in challenging environments. Its versatility and reliability make it one of the most popular transistors used in many automotive and industrial applications.

The specific data is subject to PDF, and the above content is for reference

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