SQS401ENW-T1_GE3

Vgs(th) (Max) @ Id:	2.5V @ 250µA
Package / Case:	PowerPAK® 1212-8
Supplier Device Package:	PowerPAK® 1212-8
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	62.5W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1875pF @ 20V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	21.2nC @ 4.5V
Series:	Automotive, AEC-Q101, TrenchFET®
Rds On (Max) @ Id, Vgs:	29 mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	16A (Tc)
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction
The SQS401ENW-T1_GE3 is an enhancement-mode (normally-off) N-channel MOSFET developed by SeqSense Inc. It is designed for high-frequency switching applications and is used to handle the current levels from less than one amp up to 10 amps. It has a wide range of application fields, from automotive to industrial and consumer electronics. The SQS401ENW-T1_GE3 can also be used to improve the performance of power distribution networks, as it requires significantly less power than traditional transistors for the same level of performance.

Application Field
The SQS401ENW-T1_GE3 has many applications in the automotive, industrial and consumer electronics industries, due to its high-frequency switching capability, low power consumption and low on-resistance. It can be used in a variety of power distribution networks, such as motorized vehicle power systems. Due to its low on-resistance and its ability to handle up to 10 amps of current, it can also be used in power inverters, power supplies, UPS systems, solar inverters, and fuel cells. Additionally, it can be used in digital signal processing and power conversion circuits, as well as in high-precision power control circuits. Finally, its high-frequency switching capabilities can be used in radio-frequency integrated circuits.

Working Principle
The SQS401ENW-T1_GE3 is an N-channel MOSFET, which means that it is composed of n-type silicon material. It is an enhancement-mode MOSFET, meaning that it is normally-off, meaning that the resistor-gate junction is reversely biased, which essentially turns the device off until voltage is applied to the gate. The device is used to switch current on and off by controlling the gate voltage, thanks to its low on-resistance. When the gate voltage is low, the device is off and no current flows through the drain and source. When the gate voltage is high, the device is on and current is allowed to flow between drain and source. In addition to being widely used for power distribution, the SQS401ENW-T1_GE3 is often used to enhance performance and reduce power losses, thanks to its low gate-source and gate-drain capacitance and its low RDS(ON). This makes it suitable for high-frequency switching applications, where it can achieve fast switching speeds and reduce power losses in the device.

Conclusion
The SQS401ENW-T1_GE3 is a powerful enhancement-mode N-channel MOSFET, designed for high-frequency switching applications. It has wide application fields, such as automotive, industrial, and consumer electronics. It is capable of handling up to 10 amps of current and its low on-resistance, gate-source capacitance and gate-drain capacitance make it ideal for high-frequency switching applications. Additionally, its ability to reduce power loss makes it a great choice for reducing energy consumption. In conclusion, the SQS401ENW-T1_GE3 is an excellent choice for any application that requires effective and efficient power distribution.

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