SQS482ENW-T1_GE3

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The SQS482ENW-T1_GE3 is a type of single field effect transistor (FET). FETs are semiconductor devices that are commonly used as switches, modulators and amplifiers. They are composed of a source, a drain and a gate, with the gate controlling the flow of electrons between the source and the drain. The SQS482ENW-T1_GE3 is an Enhancement Mode N-Channel FET with a breakdown voltage rating of 45 volts and a continuous drain current of 2.6 amps. It features an integrated gate charge and an extremely low on-resistance of 2.3 milliohms. The device can operate over a broad range of temperatures from -55°C to 175°C. It has a maximum power dissipation of 5.6 Watts and a thermal resistance of 3°C/W.The work principle of the device is relatively simple. When the gate is given a positive voltage, it causes the electrons to be drawn from the source, creating an electrical field between the source and the drain. The field causes a current to flow from the source to the drain. When the gate voltage is removed, the electrons are no longer drawn from the source, and the current flow is stopped.The SQS482ENW-T1_GE3 is most commonly used in power management applications. It can be used as a switch in high power voltage regulator circuits to control the current flow. It can also be used in linear voltage regulators, as well as other types of regulators such as buck, boost, and charge pumps. In addition, it is often used in high power switching circuits, power inverters, and motor control circuits.The SQS482ENW-T1_GE3 is becoming increasingly popular in today\'s electronic market due to its superior performance and reliability. Its on-resistance is one of the lowest available, which allows it to remove heat more efficiently, resulting in better overall energy efficiency. In addition, its breakdown voltage rating ensures it can handle high voltages safely. Finally, its high maximum power dissipation and thermal resistance make it an ideal solution for power management applications.

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