SQS484ENW-T1_GE3

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The SQS484ENW-T1 GE3 is a single N-Channel Enhancement-Mode MOSFET from Toshiba Semiconductor and Storage. It is a power device that is specifically made with low on-resistance characteristics down to 0.75 mΩ and excellent gain characteristics. This makes it ideally well suited to a wide range of applications such as high-speed switching and high-frequency operation.

The SQS484ENW-T1 GE3 has a maximum drain current of 200mA and a drain-source voltage of 35V. The maximum Gate-Source breakdown voltage reaches 70V and a Gate-Source on-resistance of 1.1 mΩ. This makes it ideal for applications that require low power consumption but high power performance.

In terms of its functionality, the SQS484ENW-T1 GE3 is an enhancement-mode MOSFET, meaning that it operates as a voltage-controlled switch. When the gate-source voltage increases, the switch is turned on. Conversely, when the gate-source voltage decreases, the switch is turned off. This provides the user with near-instantaneous control over the device\'s operation and can provide a number of benefits in terms of efficiency and power savings. Additionally, it can be used as an amplifier or to perform logic operations.

This device is capable of operating under high frequencies, up to 2.5 GHz, meaning that it can be employed in high-speed switching applications. It is also able to handle high currents and voltages, making it suitable for a range of difficult applications such as those in the automotive or industrial sector.

In terms of benefits, the SQS484ENW-T1 GE3 offers excellent operation and reliability. It is robustly engineered, making it capable of withstanding a wide range of environmental conditions. Additionally, it is capable of enduring high temperatures and is therefore suitable for use in automotive, industrial and consumer electronics.

The SQS484ENW-T1 GE3 is also extremely energy efficient and can help minimize energy costs. This makes it especially well-suited for applications that require high levels of energy efficiency such as those found in consumer electronics.

The SQS484ENW-T1 GE3 is an extremely capable device that offers a wide range of benefits to the user. It provides excellent gain and low resistance characteristics paired with high frequency operation and robust construction, making it ideally suited for a wide range of applications such as high-speed switching, amplifiers and logic operations.

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