Allicdata Part #: | SQS484EN-T1_GE3TR-ND |
Manufacturer Part#: |
SQS484EN-T1_GE3 |
Price: | $ 0.28 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 40V 16A 1212-8 |
More Detail: | N-Channel 40V 16A (Tc) 62W (Tc) Surface Mount Powe... |
DataSheet: | SQS484EN-T1_GE3 Datasheet/PDF |
Quantity: | 3000 |
3000 +: | $ 0.25213 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | PowerPAK® 1212-8 |
Supplier Device Package: | PowerPAK® 1212-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 62W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1855pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 39nC @ 10V |
Series: | Automotive, AEC-Q101, TrenchFET® |
Rds On (Max) @ Id, Vgs: | 9 mOhm @ 16.4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 16A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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.The popular SQS484EN-T1_GE3 is a single island N-channel power MOSFET from Infineon Technologies. Its relatively low on-state resistance, high current drive and fast switching capabilities make it a great option for a wide range of applications, from low power supplies and battery line protection to motor control and high-current DC/DC converters. This article will discuss the application field and working principle of the SQS484EN-T1_GE3, an important component in any electronic device.
Application Field of the SQS484EN-T1_GE3
The SQS484EN-T1_GE3 is mainly used in power supplies, motor control and other low noise and high current DC/DC converters. It can also be used in battery line protection, high power applications and surge protection circuits. The device is suitable for applications requiring a low R\_DS on characteristic and fast switching. It\'s ideal for any system that requires high-efficiency power supplies and low EMI. In addition to these, the SQS484EN-T1_GE3 can also be used in high-frequency converter applications, such as LLC and Buck-Boost converters.
Working Principle of the SQS484EN-T1_GE3
The SQS484EN-T1_GE3 is a single island N-channel power MOSFET that works on the principle of MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It is made up of two layers of silicon on top of a heavily doped N-type substrate. On the top side there is a layer of metal oxide and on the bottom side there is a layer of drain electrode. When a voltage is applied between the gate and the source, this creates a field between the two layers of silicon and ionizes the electrons in the channel. This alters the flow of current between the source and the drain and can be used to control the power or current. The SQS484EN-T1_GE3 can work as both an amplifier and a switch depending on the applied voltage, making it a versatile component for many different applications.
Conclusion
The SQS484EN-T1_GE3 is a single island N-channel power MOSFET that excels in many different applications. It is a great choice for low power supplies, motor control and high-current DC/DC converters. Its low on-state resistance, high current drive and fast switching capabilities make it an ideal option for circuits ranging from battery line protection to surge protection. The device operates on the principle of MOSFET and can work as both an amplifier and a switch, making it a great choice for any system that requires high-efficiency operation and low EMI.
The specific data is subject to PDF, and the above content is for reference
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