SQS460ENW-T1_GE3

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SQS460ENW-T1_GE3 is a wettable flange FMOS Field-Effect Transistor (FMOSFET) that has taken the electronics industry by storm. Developed with the latest semiconductor manufacturing and packaging technologies, the SQS460ENW-T1_GE3 is an innovative and efficient way to switch and regulate current in a range of applications. Its high thermal capacity and frequency-scaling design allow for maximum flexibility and performance for high-voltage applications.

SQS460ENW-T1_GE3 suited for high-frequency switching applications, including motor control, home appliance, and AC/DC motor drives. The combination of high-voltage, high-frequency operations and a low on-resistance of the FMOS makes it ideal for high-speed switching and regulation.

The SQS460ENW-T1_GE3 has a low on-resistance of 1.5 Ohms, making it capable of carrying up to 32 A at 100 V, making it an ideal choice for high-efficiency power applications. The reliable u-MGA technology uses a symmetrical cell structure to help ensure uniform operations, providing more reliable and consistent performance than other FETs in the market.

The SQS460ENW-T1_GE3 also provides instant protection against short circuits and transients. Its four-level protection system guards against a wide range of hazardous events and responds rapidly. With its advanced protection systems, the SQS460ENW-T1_GE3 helps protect the safety of users and surrounding circuitry.

Working Principle

The SQS460ENW-T1_GE3 allows current to flow between an input and output terminal when a voltage is applied to its gate. When the gate voltage is 0 or negative, the device is off, or non-conducting; otherwise, the voltage between the drain and source is a low resistance.

When the gate voltage is positive, a channel is formed between the drain and source creating a conduction path between them. The channel takes the form of a valley, with two resistive layers of insulator that define the bottom of the valley. When the gate voltage is high enough, the valley nears the drain and source creating a low-resistance path that allows current to flow.

When the gate voltage is increased, the on-state resistance decreases, meaning that more current can flow. On the other hand, decreasing the gate voltage causes the FET to become more resistive and the on-state resistance increases. The gate voltage is used to regulate the current flowing through the FET, making it useful for switching and regulation applications.

The SQS460ENW-T1_GE3 can be driven by currents as low as 5mA and has excellent current density. Its low gate-to-drain capacitance allows it to operate in high-frequency applications without compromising performance. The device also features a wide operating temperature range of -40 to +170°C, making it suitable for a variety of demanding applications.

The impressive performance and feature set of the SQS460ENW-T1_GE3 make it an ideal solution for many power-control applications. This FMOSFET is capable of carrying large currents, switching rapidly, and providing excellent thermal performance, making it a great choice for applications such as motor control, home appliance, and AC/DC motor drives.

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