Allicdata Part #: | SQS482EN-T1_GE3-ND |
Manufacturer Part#: |
SQS482EN-T1_GE3 |
Price: | $ 0.28 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 30V 16A 1212-8 |
More Detail: | N-Channel 30V 16A (Tc) 62W (Tc) Surface Mount Powe... |
DataSheet: | SQS482EN-T1_GE3 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.25213 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | PowerPAK® 1212-8 |
Supplier Device Package: | PowerPAK® 1212-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 62W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1865pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 39nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 8.5 mOhm @ 16.4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 16A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SQS482EN-T1_GE3 is a silicon n-channel enhancement mode power field effect transistor(MOSFET). This transistor is designed for power switching applications such as motor control, lighting, intelligent lighting and other low-side switching applications. It is manufactured as a single package including a drain, source, and gate connections. The advantage of this transistor is that it has a low on-state resistance, providing a low-power alternative to conventional NPN transistors in many applications.
The SQS482EN-T1_GE3 is a N-channel power MOSFET that has a source drain voltage of 48V and a continuous drain current of 4A. It offers low on-state resistance, high breakdown voltage and fast switching speed. The transistor is characterized by its high drain-source breakdown voltage and low gate-source capacitance, which are essential for high-frequency switching applications. It also features a low gate-source threshold voltage, meaning that the gate voltage does not need to be as high when turning on the transistor as other types of transistors. This low gate-source threshold voltage enables low power consumption by reducing the amount of current required to turn on the transistor.
The working principle of the SQS482EN-T1_GE3 involves applying electricity to the gate using the voltage between the gate and the source. This causes a small layer of electrons to accumulate on the gate region, creating a charge. This charge reduces the resistance of the MOSFET, allowing current to flow between the source and the drain. When the gate voltage is increased further, the resistance is further reduced, allowing more current to flow between the source and the drain. As the current passes through the MOSFET, a voltage drop occurs across the drain-source, which can be used to control the amount of power the MOSFET is outputting.
The main application fields of the SQS482EN-T1_GE3 transistor are in low-side switching applications, low-current motor controllers, LED lighting and intelligent lighting applications. The transistor can also be used in motor drive circuits as it offers a low on-state resistance, allowing for faster switching and higher power output. It is also suitable for other low-current applications such as audio amplification, or in applications where a low gate drive voltage is required.
The SQS482EN-T1_GE3 is a versatile MOSFET designed for low-side switching applications. It offers a low on-state resistance, high breakdown voltage, and fast switching speeds. It is an ideal choice for applications such as motor controllers, LED lighting, and intelligent lighting applications.
The specific data is subject to PDF, and the above content is for reference
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