Allicdata Part #: | SQS481ENW-T1_GE3TR-ND |
Manufacturer Part#: |
SQS481ENW-T1_GE3 |
Price: | $ 0.25 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 150V 4.7A 1212-8 |
More Detail: | P-Channel 150V 4.7A (Tc) 62.5W (Tc) Surface Mount ... |
DataSheet: | SQS481ENW-T1_GE3 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.22061 |
Vgs(th) (Max) @ Id: | 3.5V @ 250µA |
Package / Case: | PowerPAK® 1212-8 |
Supplier Device Package: | PowerPAK® 1212-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 62.5W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 385pF @ 75V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 11nC @ 10V |
Series: | Automotive, AEC-Q101, TrenchFET® |
Rds On (Max) @ Id, Vgs: | 1.095 Ohm @ 5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 4.7A (Tc) |
Drain to Source Voltage (Vdss): | 150V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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SQS481ENW-T1_GE3 is an advanced type of FET (Field-Effect Transistor) device. It has a single structure and is mainly used in analog circuits. This type of device is often referred to as a single-gate MOSFET, and it operates on a principle of voltage regulation. Its main purpose is to be used as a switch to control the flow of electrical current, or to isolate one electrical circuit from another. It can also be used as amplifiers or other similar applications.
The working principle of the SQS481ENW-T1_GE3 FET is based on the ability of an applied voltage to influence the behavior of the internal channel that is established between its source and drain terminals. This channel controls the current flow between the source and drain, and the amount of current flowing can be regulated by the applied voltage. In other words, when a voltage is applied to the gate terminal, the internal channel opens and current starts to flow, and similarly, when the voltage is removed, the channel closes, and the current stops flowing. In addition, the resistance of the channel can be influenced by the amount of voltage applied to the gate terminal.
Some of the applications of the SQS481ENW-T1_GE3 FET include, but are not limited to, voltage regulators, logic gates, power management, and high-frequency switches. As voltage regulators, the SQS481ENW-T1_GE3 is used to control the output voltage, by adjusting the resistance of the internal channel. As logic gates, these devices are used for controlling the flow of electrical signals, and are especially common in digital circuits. For power management applications, the SQS481ENW-T1_GE3 is used to control the current flow in order to regulate the current levels in the system. Finally, high-frequency switches are also used with this device, as it can provide fast switching operations, which are critical in modern electronics.
In conclusion, the SQS481ENW-T1_GE3 is a single-gate FET device that operates on a voltage-dependent principle. Its main purpose is to be used as a switch to control the flow of electrical current, or to isolate one electrical circuit from another. This device can be used in a variety of applications, such as voltage regulation, logic gates, power management and high-frequency switches. With its flexibility, it is no wonder that the SQS481ENW-T1_GE3 is a popular choice for electronics engineers.
The specific data is subject to PDF, and the above content is for reference
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