STB60N55F3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The STB60N55F3 is a 60 volt N-channel power MOSFET (metal-oxide-semiconductor field-effect transistor) that is designed for applications including push-pull converters, DC-DC converters, motor drivers, lamp drivers, and low-power low-side switches. It has a continuous drain current (ID) of 55 Amps, a maximum pulsed drain current (IDM) of 110 Amps, and a drain-source breakdown voltage (BVDSS) of 60 volts.

Power MOSFETs are voltage-controlled transistors, so they have an insulated gate that requires a DC input signal to control the amount of current allowed to pass through the source and drain terminals. As the applied voltage to the gate increases, the drain current increases and vice versa. This makes power MOSFETs much more efficient energy-wise than most other forms of transistors.

The STB60N55F3 uses an trench gate structure, which allows it to have a low on-resistance value of 0.2 Ohms. This low on-resistance is the main advantage of this MOSFET. Due to this, the device is able to handle large amounts of current efficiently, making it suitable for high-power switching applications. It also has low input and output capacitances, which help to keep overall circuit losses to a minimum.

Another advantage of the STB60N55F3 is its high-temperature performance. The device is capable of operating at temperatures up to 175°C, which is significantly higher than other MOSFETs on the market. This means that the device can be used in applications that expose it to high temperatures without causing any performance degradation.

The STB60N55F3 also features undervoltage lockout, which allows the device to only turn on when the input voltage is above a certain threshold. This feature helps to prevent the MOSFET from switching on at an insufficient voltage, which can cause the device to be damaged or short out.

Overall, the STB60N55F3 is a high-performance, high-efficiency power MOSFET that is ideal for applications such as DC-DC converters, motor drivers, and low-power low-side switches. The device features a low on-resistance value, high temperature performance, and Under Voltage Lockout to ensure reliable operation. Additionally, the device is available in a TO-220AC package, making it compatible with most PCBs.

The specific data is subject to PDF, and the above content is for reference