| Allicdata Part #: | 497-7950-2-ND |
| Manufacturer Part#: |
STB60NF06T4 |
| Price: | $ 0.64 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | MOSFET N-CH 60V 60A D2PAK |
| More Detail: | N-Channel 60V 60A (Tc) 110W (Tc) Surface Mount D2P... |
| DataSheet: | STB60NF06T4 Datasheet/PDF |
| Quantity: | 60 |
| 1 +: | $ 0.64000 |
| 10 +: | $ 0.62080 |
| 100 +: | $ 0.60800 |
| 1000 +: | $ 0.59520 |
| 10000 +: | $ 0.57600 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | D2PAK |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -65°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 110W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1810pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 66nC @ 10V |
| Series: | STripFET™ II |
| Rds On (Max) @ Id, Vgs: | 16 mOhm @ 30A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 60A (Tc) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The STB60NF06T4 is a highly efficient and economical N-channel MOSFET, meaning it is a form of field effect transistor. It uses a FET (Field effect transistor) design, meaning the same principles as used in a transistor device can be applied. It is an excellent choice for short gate delay times and low on-resistance. This type of device is commonly used in power circuits and switching circuits, including automotive and household applications.
In terms of its application field, the STB60NF06T4 is suitable for use in a variety of applications. These include motor vehicle applications, such as electric vehicle inverters and other power circuitry; industrial applications, such as power supplies and industrial automation equipment; and consumer applications, such as smart home electronics and wireless networks. It can also be used in a variety of other applications.
The working principle of the STB60NF06T4 is best explained by comparing it to a traditional transistor device. In a conventional transistor, the current flows from its source to its drain, through its gate. In contrast, in an FET device such as the STB60NF06T4, the current flows from the source to the drain, through the field effect of the gate. The reason for this difference is that a FET device does not rely on the movement of traditional electrons (which are the basis for a traditional transistor device), but rather on the movement of electron holes (which are the opposite of electrons), created when electrons are removed from atoms. As a result, the speed of conduction is increased and the switch-off time is reduced, making the device more efficient.
In practical terms, the STB60NF06T4 works by opening and closing the flow of current between its source and drain terminals. This is done by controlling the electric field at its gate. When the electric field is set to a certain value, called the “threshold voltage”, the flow of current through the device is opened. When the electric field is reduced to below the threshold voltage, the flow of current is stopped. This is how the device works in a power circuit or other switching application.
The STB60NF06T4 is highly efficient and economical, making it a great choice for a wide range of applications. It can be used in a variety of automotive, industrial and consumer applications, and its high efficiency and low on-resistance make it an ideal choice for power and switching circuits. In summary, the STB60NF06T4 is a highly efficient and economical N-channel MOSFET with a wide range of applications in the automotive, industrial and consumer marketplace.
The specific data is subject to PDF, and the above content is for reference
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STB60NF06T4 Datasheet/PDF