| Allicdata Part #: | 497-8770-2-ND |
| Manufacturer Part#: |
STB6NM60N |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | MOSFET N-CH 600V 4.6A D2PAK |
| More Detail: | N-Channel 600V 4.6A (Tc) 45W (Tc) Surface Mount D2... |
| DataSheet: | STB6NM60N Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | D2PAK |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 45W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 420pF @ 50V |
| Vgs (Max): | ±25V |
| Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 10V |
| Series: | MDmesh™ II |
| Rds On (Max) @ Id, Vgs: | 920 mOhm @ 2.3A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 4.6A (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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STB6NM60N, also known as an insulated-gate bipolar transistor (IGBT), is a three-terminal electron device where the current flowing through the device is controlled by the voltage applied to the gate terminal. It consists of a combined PNPN structure and is simple and easy to control. Because of its simple construction and excellent characteristics, IGBTs are widely used in various applications.
STB6NM60N is a popular N-channel MOSFET type IGBT module with competitive switching characteristics and performance. It is often used in high-current applications such as motor speed control, AC/DC inverters, UPS, welding and cutting, and static switches. It also provides faster speed and higher energy efficiency than regular N-channel MOSFETs.
The STB6NM60N\'s main features are its high input impedance, low on-resistance, easy switching on and off, and fast switching speeds. The high input impedance is able to prevent it from being switched off by a high gate current, thus making it more efficient and reliable. It also has a good digitized driving capability, allowing for quick switching.
The working principle of STB6NM60N is relatively simple. When the voltage applied to the gate of the device is positive, the current flows in the circuit. When the applied voltage is negative, the current stops flowing, thus turning off the device. The main components of the device include an N-channel MOSFET and an insulated-gate. The MOSFET provides the switching feature and the insulated-gate provides the current-flow control.
The STB6NM60N is generally used in applications such as motor control, lighting, UPS, static switching applications, power switching, and inverters. It is also used in power semiconductor products such as electrically commutated motor (ECM) drives, solar converters, and power electronics. Due to its high I/O rating, low RDS(on) value, and low gate-drive voltage, STB6NM60N is suitable for the high-current applications.
In summary, the STB6NM60N is an optimized single N-channel MOSFET type IGBT module with excellent characteristics and working principle. It is often used in applications such as motor control, UPS, static switching, power switching, and inverters. Its high input impedance, low on-resistance, and fast switching speeds make it ideal for high-current applications. The improved efficiency and reliability of STB6NM60N make it one of the popular IGBTs in the market.
The specific data is subject to PDF, and the above content is for reference
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STB6NM60N Datasheet/PDF