STB6NK60Z-1

Vgs(th) (Max) @ Id:	4.5V @ 100µA
Package / Case:	TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package:	I2PAK
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	110W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	905pF @ 25V
Vgs (Max):	30V
Gate Charge (Qg) (Max) @ Vgs:	46nC @ 10V
Series:	SuperMESH™
Rds On (Max) @ Id, Vgs:	1.2 Ohm @ 3A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	6A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Not For New Designs
Packaging:	Tube

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STB6NK60Z-1 Application Field and Working PrincipleSTB6NK60Z-1 is a dual N-channel MOSFET (D-MOSFET) device. It is an integrated module used in a variety of power switching applications, such as AC/DC converters, motor drivers, and power amplifiers. The device has a total of two N-channel MOSFETs, each in a separate package connected by a common source pin. The STB6NK60Z-1 operates as a switch, controlling the flow of current between its source and drain pins. It uses the MOSFET’s majority carrier conduction (hole or electron) to control its current. When the gate voltage is low, the MOSFET is off and no current flows through it. When the gate voltage is high, the MOSFET is on and the current flows from the source to the drain. The high and low gate voltages define the on and off states of the MOSFET. In the dual MOSFET configuration of the STB6NK60Z-1, two separate N-channel MOSFETs are connected in parallel to control the same load. This configuration allows for higher power handling and better control of the load. It also helps to reduce on-resistance compared to other single MOSFETs. The STB6NK60Z-1 is well suited for low- to medium-voltage applications up to 24V and offers a wide range of output current capabilities, up to 1.9A maximum drain current. The device is also equipped with a built-in temperature sensor, which allows for monitoring of the device’s operating temperature. The STB6NK60Z-1 can be used in a variety of applications, such as AC/DC power supplies, battery chargers, solar panel chargers, motor drives, and other power switches. Its flexibility and high performance make it an ideal device for these applications. In addition to its wide range of applications, the STB6NK60Z-1 also offers several benefits. It is a low-power device with low gate capacitance, which helps reduce switching losses. It also has a low ON resistance, which helps to reduce power dissipation and improve system efficiency. In addition, its built-in temperature sensor helps monitor the device’s heat dissipation and protect the system from overloading.Overall, the STB6NK60Z-1 is a versatile, high-performance dual MOSFET device that offers a wide range of output current capabilities, high switching speeds, and excellent thermal performance. Its low power consumption, low gate capacitance and low on-state resistance help improve system efficiency and make it ideal for a variety of power switching applications.

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