STB6N80K5

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A Transistor FET is a three-terminal device that is widely used in the electronics industry. It has two main features, a semiconductor channel between a source and a drain, and an insulated gate electrodes on top of the channel. STB6N80K5 is a popular single n-channel field-effect transistor (MOSFET), built using the Cell Logic® technology to deliver very fast switching performance. This article will focus on the application fields and working principles of the STB6N80K5.

Application Fields of the STB6N80K5 MOSFET

The STB6N80K5 is a highly reliable device and can be used in a wide range of applications. It is suitable for use in low voltage, high current, and low EMI applications. Some common application fields include motor control, power conversion, and power management. As it has a low RDS(on), it is a better choice for such applications than other MOSFETs.

It is also suitable for wide temperature ranges beyond 100°C due to its low gate charge. Being an N-channel MOSFET, it has very good current conduction capability and can handle very high currents. Therefore, it is ideal for high power conversion applications. It is also suitable for applications where a fast switching performance is required. It is also used in voltage and frequency converters, in other power supply circuits, in LED lighting, and in power amplifiers.

Working Principle of the STB6N80K5

As a MOSFET, the STB6N80K5 is a three-terminal device with a source, a gate, and a drain. It is made with a metal gate electrode, an insulated gate dielectric layer, and a very heavily doped silicon channel. The device works from its transistor action, in which the electric field generated by a gate voltage applied to the gate induces a conducting path between the source and the drain. It relies upon the accumulation of majority carriers in its active region to create a conductive channel between its terminals.

The STB6N80K5 has two switching phases: high-side and low-side switching. During the high-side switching phase, the gate-source voltage is equal to the drain voltage and the gate voltage is equal to the source voltage. During this phase, the device is in an on-state and the source is supplying current to the load. When the source-drain voltage becomes greater than the gate-source voltage, the device enters the low-side switching phase. During this phase, the device is in an off-state and the source is not supplying current to the load.

The STB6N80K5 has two power off states, the ESD protection diode mode (Vgs=0V) and the current-steering mode (Vgs≥Vth). In the ESD protection diode mode, the device is operating in low breakdown voltage due to the presence of a back-to-back coupled diode between the source and the drain. In the current steering mode, the device is in a high breakdown voltage state and the electrons between the source and the drain are efficiently steered away from the source.

Conclusion

The STB6N80K5 is a popular single n-channel field-effect transistor (MOSFET), built using the Cell Logic® technology to deliver very fast switching performance. It has a low RDS(on) value, making it suitable for a wide range of applications including motor control, power conversion, and power management. The device works from its transistor action and has two switching phases, high-side and low-side switching. It has two power off states, the ESD protection diode mode and the current-steering mode. The STB6N80K5 is an excellent choice for a wide range of applications that requires high power conversion and fast switching performance.

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