STB6NK60ZT4

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STB6NK60ZT4 is a single N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) manufactured by ST Microelectronics. This product is designed to provide high performance, high-speed switching, low-loss gate drive, low gate charge and low on-state resistance. In this post, we will discuss the application field and working principle of STB6NK60ZT4.

Application Field

The STB6NK60ZT4 is well suited for high frequency switched-mode power supplies, DC-DC conversion, pulse width modulated (PWM) control and synchronous rectification circuits. It is an ideal choice for portable applications powered by one or two batteries.

This MOSFET has been designed for optimal operation in both high current and high voltage conditions with very low on-state resistance to improve system efficiency. The on-resistance of STB6NK60ZT4 is quite low even when compared to other MOSFET\'s with similar voltage ratings. This helps to reduce power losses and enhance efficiency in power conversion applications.Along with excellent reverse transfer capacitance and a positive temperature coefficient, this MOSFET offers very reliable switching performance.

In addition to these advantages, the STB6NK60ZT4 can handle large currents with minimal power supply voltage and it is also suitable for a wide range of operating temperatures. This MOSFET is perfect for applications such as motor control, server power supplies and battery management systems.

Working Principle

The STB6NK60ZT4 works on metal-oxide-semiconductor field effect transistor (MOSFET) principles. It is a four layer device wherein a thin layer of metal oxide acts as the insulating or dielectric layer between the gate and drain terminal. With a MOSFET, it works on the principle of a biased gate between the source and drain terminal. Applying a positive gate voltage attracts free electrons stored in the gate and this generates a conducting channel between the source and drain terminal.

The STB6NK60ZT4 is a depletion type MOSFET, and that means it is designed to operate in an off-state until an electrical field is established at the gate terminal. The channel between source and drain break down due to the application of gate voltage and become conducting.

The high electrical field breakdown strength means the device will not be damaged easily in case of a short circuit or voltage spikes. It allows the device to handle higher voltages and longer switching times with lower power losses.

The device features excellent switching characteristics and low ON state resistance (RDSon). This ensures minimal voltage losses in the MOSFET and optimal efficiency in power applications. It also has good electrostatic discharge (ESD) protection and temperature compensation, which helps to protect the device from high contact voltages.

The STB6NK60ZT4 has an excellent maximum junction temperature of 175°C that is a lot higher than many other MOSFETs, making it highly suitable for automotive, industrial and other high temperature applications. The maximum power dissipation of 31W also ensures efficient heat dissipation and high reliability.

In summary, the STB6NK60ZT4 is an excellent Single N-channel MOSFET that is well suited for high current and high voltage applications. With its low on-state resistance, it offers improved system efficiency and excellent switching performance. Along with the high temperature and power dissipation capabilities, this device is also highly reliable and suitable for a variety of applications.

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