Allicdata Part #: | 497-6554-2-ND |
Manufacturer Part#: |
STB60NF06LT4 |
Price: | $ 0.67 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 60V 60A D2PAK |
More Detail: | N-Channel 60V 60A (Tc) 110W (Tc) Surface Mount D2P... |
DataSheet: | STB60NF06LT4 Datasheet/PDF |
Quantity: | 2000 |
1000 +: | $ 0.60721 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -65°C ~ 175°C (TJ) |
Power Dissipation (Max): | 110W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2000pF @ 25V |
Vgs (Max): | ±15V |
Gate Charge (Qg) (Max) @ Vgs: | 66nC @ 4.5V |
Series: | STripFET™ II |
Rds On (Max) @ Id, Vgs: | 14 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 60A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The STB60NF06LT4 is a type of transistor and falls into the category of single FETs and MOSFETs. It is often used in applications where power control, signal switching, and amplification are required. The STB60NF06LT4 is a 60V, 0.07Ω, N-channel device designed for use in medium current and low voltage applications such as motor controls, relay drivers, solenoid switches, and home appliances.
The STB60NF06LT4 is constructed using an advanced process technology which combines ESD protection and low on-resistance. It has an on-resistance parameter of 0.07Ω max, a gate threshold voltage of Vgsth=1.9V max and a fast switching speed of 4.6ns. This makes it ideally suited for applications that require fast, efficient power control. Additionally, the STB60NF06LT4 has low Rds(on) values which provides superior power efficiency and reduces losses during operation.
The working principle of the STB60NF06LT4 is based on the source-drain current flow through an insulated gate (IGFET) when it is switched on. The IGFET has a P-channel control (GCT) terminal which receives an external voltage and acts as the gate between the source and drain regions. When a positive voltage is applied to the GCT, it closes the gate allowing current to flow and the IGFET is said to be on. Conversely, when a negative voltage is applied, the gate is opened, cutting off the flow of current, and the IGFET is said to be off. Thus, the GCT voltage is used to control the flow of current through the device.
The STB60NF06LT4 has a wide range of applications. It can be used in PCBs for motor driver applications, power switches, voltage regulators, lighting controls, HVAC systems, relays, solenoids, and much more. In each of these applications it is used to provide an efficient, high-speed method of controlling power, switching signals, or amplifying power. In some applications, the STB60NF06LT4 may have to be combined with other components in order to achieve the desired effect. For instance, in switching applications, it may be necessary to include a gate driver IC to provide the necessary drive voltage to activate the gate.
In summary, the STB60NF06LT4 is a type of transistor and is classified as a single FET or MOSFET. It is a 0.07Ω N-channel device and is used in medium current and low voltage applications. Its working principle is based on the source-drain current flow through an insulated gate when it is switched on and its GCT voltage is used to control the flow of current through the device. The STB60NF06LT4 has a wide range of applications, from motor drivers to power switches, voltage regulators, and more.
The specific data is subject to PDF, and the above content is for reference
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