STD100N03LT4

Vgs(th) (Max) @ Id:	1V @ 250µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	DPAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	110W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2060pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	27nC @ 5V
Series:	STripFET™
Rds On (Max) @ Id, Vgs:	5.5 mOhm @ 40A, 10V
Drive Voltage (Max Rds On, Min Rds On):	5V, 10V
Current - Continuous Drain (Id) @ 25°C:	80A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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<html><div><p>The STD100N03LT4 is a N-Channel Enhancement-Mode Metal Oxide Semiconductor Field Effect Transistor (MOSFET) which has been designed and developed for general purpose applications. This type of transistor is typically used in digital circuits and power switching applications. The STD100N03LT4 device features a reliable, high-speed and low-power switching operation. It has been designed to offer superior performance in power switching applications.</p><p>The STD100N03LT4 transistor is a single N-Channel MOSFET with a minimum drain-source breakdown voltage of 100V and a maximum drain current of 30A. It is based on the latest technology and provides a low on-resistance, fast switching speed and low gate charge. The device has been designed for signal and power switching applications in a variety of different systems. It is available in a TO-220 package and can be used in a range of different environments. </p><p>The STD100N03LT4 is typically used in applications such as motor control, power supply design, power switching, LED drivers, dc-dc converters, and inverters. It is also used to enhance performance and reliability in portable devices such as cellular phones, notebook PCs, digital cameras, and PDAs. </p><p>The STD100N03LT4 transistor has a typical operating temperature range of 0°C to 70°C. It has a maximum junction temperature of 150°C and a maximum storage temperature of 150°C. It features a low gate threshold voltage of 4V and a maximum drain-source on-resistance of 0.0251Ω. </p><p>The STD100N03LT4 transistor has a maximum power dissipation rating of 140W and is rated for a maximum avalanche energy (EAS) of 45mJ at a drain-source voltage of 100V. It is a voltage-controlled device, meaning that the amount of current flowing through the device is determined by the voltage applied to the gate. The device operates on the principle of MOSFETs, which uses an electric field to control the flow of electrons between the source and the drain. </p><p>The STD100N03LT4 transistor is used in many applications due to its low on-resistance and fast switching speed. It can be used in power switching and motor control applications due to its low drain-source on-resistance and high power dissipation rating. It is also ideal for use in LED drivers due to its low gate threshold voltage and low on-resistance. It is also used in DC-DC converters and inverters due to its low gate charge and fast switching speed. </p></div></html>

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