| Allicdata Part #: | 497-17880-2-ND |
| Manufacturer Part#: |
STD15N50M2AG |
| Price: | $ 0.54 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | MOSFET N-CHANNEL 500V 10A DPAK |
| More Detail: | N-Channel 500V 10A (Tc) 85W (Tc) Surface Mount DPA... |
| DataSheet: | STD15N50M2AG Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 0.54000 |
| 10 +: | $ 0.52380 |
| 100 +: | $ 0.51300 |
| 1000 +: | $ 0.50220 |
| 10000 +: | $ 0.48600 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | DPAK |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 85W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 530pF @ 100V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 10V |
| Series: | Automotive, AEC-Q101, MDmesh™ M2 |
| Rds On (Max) @ Id, Vgs: | 380 mOhm @ 5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 10A (Tc) |
| Drain to Source Voltage (Vdss): | 500V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The STD15N50M2AG is a power MOSFET produced by STMicroelectronics. It is an N-Channel enhancement mode power field-effect transistor (FET) designed for applications such as switching, amplifier and DC/DC converter. The STD15N50M2AG has a drain-source voltage (VDS) of 500 V, drain current (ID) capability of 15 A and a gate charge (Qg) of 56 nC. As a general rule, the STD15N50M2AG can handle load currents up to four times its R DS 25°C (Max) at temperatures up to 175°C (max).
The application field of the STD15N50M2AG includes, but is not limited to, the following:
- Switch Mode Power Supplies (SMPS)
- Very Fast Switching Motors
- Inverters
- Battery Chargers
The working principle of the STD15N50M2AG is based on the fact that it is an enhancement mode MOSFET. The enhancement mode MOSFETs require a positive gate-source voltage (Vgs) to provide a conducting path between source and drain even if there is no gate current applied. The drain current for the MOSFET is controlled by the gate voltage (Vgs) applied to it. The gate-source voltage must be greater than the threshold voltage (Vt) of the transistor to ensure a conducting path from source to drain. As the gate-source voltage increases, the channel of the MOSFET widens, which increases the drain current. Therefore, the drain current of the MOSFET is directly proportional to the applied Vgs, provided the drain voltage (Vds) is greater than the threshold voltage (Vt).
The STD15N50M2AG is also protected against third-party and reverse drain-to-source voltage. Its RDS(on), the resistance between the drain and the source in the ON state, is specified at 3 mΩ at 25°C. The N-channel FD-MOS supports a maximum drain-to-source voltage of 500 V. The STD15N50M2AG also has a purely linear character from its pinch-off region to saturation region.
Furthermore, the STD15N50M2AG is suitable for power management applications due to its low gate charge and high-speed switching characteristics. Its switching frequency capability is up to 500 kHz, thus allowing it to be used in applications such as fast motor control, DC/DC converters, and high-efficiency switching supplies.
In conclusion, the STD15N50M2AG is a robust and reliable N-channel enhancement mode MOSFET device. It is suitable for applications such as switching, amplifier and DC/DC converter, and is protected against third-party and reverse drain-to-source voltage, making it an ideal choice for power management applications.
The specific data is subject to PDF, and the above content is for reference
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STD15N50M2AG Datasheet/PDF