STD100N10F7 Allicdata Electronics
Allicdata Part #:

497-13548-2-ND

Manufacturer Part#:

STD100N10F7

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N CH 100V 80A DPAK
More Detail: N-Channel 100V 80A (Tc) 120W (Tc) Surface Mount DP...
DataSheet: STD100N10F7 datasheetSTD100N10F7 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 120W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4369pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V
Series: DeepGATE™, STripFET™ VII
Rds On (Max) @ Id, Vgs: 8 mOhm @ 40A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The STD100N10F7 is a N-channel enhancement-mode Field-Effect Transistor (FET) with low ON-resistance and high maximum junction temperature. It is utilized in a variety of applications including power conversion, motor control, and industrial automation.

This device is part of the third generation PowerTrench™ MOSFETs with low ON-resistance due to their advanced cell architecture. These MOSFETs are suited for use in a wide variety of portable equipment applications where heat dissipation can be a problem due to the high-current applications they are used in.

A MOSFET is an electronic component consisting of three layers, two of which are made up of semiconductor material, and the third is a gate formed of oxide. MOSFETs are commonly used as transistors, since they are fast, and they can also amplify a signal. The STD100N10F7 utilizes the enhancement-mode MOSFET, which compared to a depletion-mode FET, which is the traditional type, has better control over the drain-source voltage.

The STD100N10F7 MOSFET is ideal for use in a variety of applications, including switched-mode power supplies, automotive applications, and much more. This MOSFET offers a number of advantages, including low on-resistance, low gate charge, and high maximum junction temperature.

To work, MOSFETs require a certain amount of voltage and current at their gate, referred to as the gate threshold voltage. When you apply a gate voltage above the threshold, the charge carriers in the channel are activated, and the device turns on and can allow current to flow through it. The operation of a MOSFET can be simplified into two states: the cutoff state, in which no current flows through the device, and the saturation state, in which the circuit can conduct current. The STD100N10F7 utilizes the MOSFET in saturation mode, so it can be used to control the flow of current.

Another application of the STD100N10F7 MOSFET is in pulse-width modulation, which can be used to convert an analog signal into a digital one. PWM is used in a variety of applications, such as the control of motors and the dimming of LED lights. By varying the duty cycle of the signal, you can control the speed of the motor or the intensity of the light.

The STD100N10F7 MOSFET has found a number of applications in today’s world, and its capabilities for controlling current and amplifying signals have made it an invaluable component for many electronic designs. With its low ON-resistance and high maximum junction temperature, the STD100N10F7 is a great choice for many design applications.

The specific data is subject to PDF, and the above content is for reference

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