STD10NM60N Allicdata Electronics
Allicdata Part #:

497-10021-2-ND

Manufacturer Part#:

STD10NM60N

Price: $ 0.90
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 600V 10A DPAK
More Detail: N-Channel 600V 10A (Tc) 70W (Tc) Surface Mount DPA...
DataSheet: STD10NM60N datasheetSTD10NM60N Datasheet/PDF
Quantity: 1000
1 +: $ 0.90000
10 +: $ 0.87300
100 +: $ 0.85500
1000 +: $ 0.83700
10000 +: $ 0.81000
Stock 1000Can Ship Immediately
$ 0.9
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 70W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 50V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Series: MDmesh™ II
Rds On (Max) @ Id, Vgs: 550 mOhm @ 4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The STD10NM60N is an advanced power MOSFET that offers excellent performance in a wide range of applications. It is a full-bridge device suitable for use in both high-side and low-side applications. It is ideal for applications ranging from broadband communication systems to industrial motor drives and home appliances. The STD10NM60N has a maximum drain-source voltage (VDS) of 600V, a maximum drain current (ID) of 10A, and a maximum power dissipation of 150W. It is available in TO-220 and TO-263 (D2PAK) packages.

This device is designed to minimize switching losses while maintaining fast switching speeds and low gate-drive requirements. The STD10NM60N is also designed to withstand high surge currents and withstand temperatures up to 150°C. It has low output capacitance, making it ideal for power converters used in switching mode power supplies.

The working principle of the STD10NM60N is based on the operation of power MOSFETs. Power MOSFETs are voltage-controlled devices that are used to switch electrical power. They are built from a vertical stack of N-type and P-type semiconductor layers, which are referred to as DMOS transistors. When the gate voltage exceeds a certain threshold (VGS), the MOSFET turns on and electrical current can flow from the drain to the source. When the gate voltage is reduced, the MOSFET turns off and the drain-source voltage (VDS) level is reduced.

The STD10NM60N is designed primarily for switching applications, but can also be used in linear control applications. When used in switching applications, the STD10NM60N is used to control the power going to a load. It is used to turn the power on and off, allowing the load to be switched on and off in a controlled manner. When used in linear control applications, the STD10NM60N is used to control the amount of power applied to a load. By adjusting the gate voltage, the current flow can be adjusted to regulate the power being delivered to the load.

The STD10NM60N is well-suited for use in many applications, from broadband communication systems to motor drives and home appliances. It can be used as a power switch for switching power levels and for linear-control applications. Its fast switching speeds, low gate-drive requirements, and high voltage and current ratings make it an attractive choice for these applications. In addition, its low output capacitance and temperature ratings make it suitable for use in switching mode power supplies.

The specific data is subject to PDF, and the above content is for reference

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