| Allicdata Part #: | 497-15111-2-ND |
| Manufacturer Part#: |
STD16N50M2 |
| Price: | $ 0.88 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | MOSFET N-CH 500V 13A DPAK |
| More Detail: | N-Channel 500V 13A (Tc) 110W (Tc) Surface Mount TO... |
| DataSheet: | STD16N50M2 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 0.88000 |
| 10 +: | $ 0.85360 |
| 100 +: | $ 0.83600 |
| 1000 +: | $ 0.81840 |
| 10000 +: | $ 0.79200 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | TO-252, (D-Pak) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 110W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 710pF @ 100V |
| Vgs (Max): | ±25V |
| Gate Charge (Qg) (Max) @ Vgs: | 19.5nC @ 10V |
| Series: | MDmesh™ |
| Rds On (Max) @ Id, Vgs: | 280 mOhm @ 6.5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 13A (Tc) |
| Drain to Source Voltage (Vdss): | 500V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The STD16N50M2 is a high voltage (600V), low gate charge (680nC), high performance MOSFET transistor used for various general purpose applications. It has an ultra-low Qrr rating of 25nC, making it an ideal choice for high speed switching applications such as fast power supplies and low-power motor control.
The STD16N50M2 has a small size and integrated single surface mount package offering both exceptional thermal and electrical properties. Its high voltage rating and low gate charge make it suitable for light load switching, protected start up and off-line applications.
In a typical circuit, the STD16N50M2 MOSFET is used to control the current flowing through an electrical appliance or circuit. To operate correctly, the circuit must be powered with the correct voltage. When current flows through the MOSFET, it creates a voltage drop across the drain and source terminals (called Vds). As the voltage increase, the gate voltage must also increase to increase the gate voltage so that the electric field generated across the MOSFET channel is increased, thus allowing more current to pass through the transistor.
The gate of the MOSFET must also be at a voltage that is slightly higher than Vds (called Vgs). This is referred to as the threshold voltage and is usually around 5V or so. When Vgs is greater than Vds, the gate will turn on (i.e. the channel will allow current to flow). This is called the "on" state of the transistor. When Vgs is lower than Vds, the gate will be "off" and no current will flow through the channel.
Due to the high voltage rating of the STD16N50M2 MOSFET, it is also suitable for high-power applications such as lighting, UPS systems and motor control. Its high-frequency performance, low gate charge and low threshold voltage all make it an excellent choice for applications that require fast switching speeds. Its packaging is also small, making it suitable for designers of space-constrained products.
To summarize, the STD16N50M2 MOSFET transistor is a versatile semiconductor device with a wide range of applications. Its low gate charge and high voltage rating make it well suited for high-speed switching and high-power applications, while its small size and integrated surface mount package make it suitable for use in space-constrained applications.
The specific data is subject to PDF, and the above content is for reference
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STD16N50M2 Datasheet/PDF