STD14NM50NAG Allicdata Electronics
Allicdata Part #:

STD14NM50NAG-ND

Manufacturer Part#:

STD14NM50NAG

Price: $ 0.60
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET
More Detail: N-Channel 500V 12A (Tc) 90W Surface Mount DPAK
DataSheet: STD14NM50NAG datasheetSTD14NM50NAG Datasheet/PDF
Quantity: 1000
2500 +: $ 0.53794
Stock 1000Can Ship Immediately
$ 0.6
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 90W
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 816pF @ 50V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Series: Automotive, AEC-Q101, MDmesh™ II
Rds On (Max) @ Id, Vgs: 320 mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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Transistors - FETs, MOSFETs - Single
The STD14NM50NAG is an advanced N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) available today. It is designed for high performance switching applications that require medium voltage and current capabilities. This MOSFET is ideally suited for applications including motor control, industrial, and automotive.
  • Application Field and Working Principle:
The STD14NM50NAG MOSFET is used in many applications that require high voltage and current capabilities. For example, it is often used in motor control applications where a modulated signal is required to control the speed of a motor. Other uses include industrial and automotive applications where the power switching requirements of the circuit need high voltage and current capabilities.MOSFETs are great for controlling current in both directions and with very little power loss. In the circuit, when a voltage is applied to the gate terminal, it creates an electric field that creates an inversion region around the channel of the device. This turns the device on, allowing current to flow from the source terminal to the drain terminal. This process is known as the ‘field effect’.The STD14NM50NAG MOSFET is designed to operate in the depletion mode. This means that when the gate voltage is below the threshold voltage, the device is off, and no current will flow. When the gate voltage exceeds the threshold voltage, the device is on, and current is allowed to pass through. This makes the device perfect for applications such as motor control, where the speed can be adjusted by changing the voltage applied to the gate.The STD14NM50NAG has a maximum drain-source voltage of 500V, which can support high voltage switching and power control. The device also has a maximum drain current of 14A, making it ideal for applications where high current is needed. The device has a low thermal resistance, meaning it can also be used in applications that generate a lot of heat.The STD14NM50NAG MOSFET is an advanced single n-channel MOSFET which offers great performance and durability. It is ideal for applications requiring medium voltage and current capabilities, and is perfect for motor control, industrial, and automotive applications. The device is designed to operate in the depletion mode, allowing the gate voltage to be adjusted to control the current flow, making it ideal for switching applications. The device also has a maximum drain-source voltage of 500V, and a maximum drain current of 14A, giving it the power to handle high voltage and current switching applications.

The specific data is subject to PDF, and the above content is for reference

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