| Allicdata Part #: | 497-15258-2-ND |
| Manufacturer Part#: |
STD16N65M2 |
| Price: | $ 0.85 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | MOSFET N-CH 650V 11A DPAK |
| More Detail: | N-Channel 650V 11A (Tc) 110W (Tc) Surface Mount DP... |
| DataSheet: | STD16N65M2 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 0.85000 |
| 10 +: | $ 0.82450 |
| 100 +: | $ 0.80750 |
| 1000 +: | $ 0.79050 |
| 10000 +: | $ 0.76500 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | DPAK |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 110W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 718pF @ 100V |
| Vgs (Max): | ±25V |
| Gate Charge (Qg) (Max) @ Vgs: | 19.5nC @ 10V |
| Series: | MDmesh™ M2 |
| Rds On (Max) @ Id, Vgs: | 360 mOhm @ 5.5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 11A (Tc) |
| Drain to Source Voltage (Vdss): | 650V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The STD16N65M2 is a single-channel, power silicon Gate MOSFET with a wide range of application fields and working principles that serve as the basis for its versatile and high-performance capabilities. Featuring advanced performance specifications and optimal thermal characteristics, the MOSFET makes it an ideal choice for applications requiring both power and linearity.
The STD16N65M2 MOSFET is an excellent, cost-effective solution for both high-side and low-side switching. It is capable of switching loads of up to 16A and performing in a wide range of temperatures, from ambient to 200°C. The device also includes a current limit feature, which enables it to limit the amount of current passing through the device by detecting current peaks in the load circuit.
The MOSFET\'s main application field is high-side and low-side power switching. It is primarily used in power switching and driver applications, such as motor drivers, inverters, and AC/DC controllers. It can also be used as a switch in various electronic systems, such as portable electronic products and lighting control systems. As an example, the STD16N65M2 MOSFET enables high efficiency and low loss in LED lighting systems by controlling the voltage applied to the LED.
The STD16N65M2\'s working principle depends on the type of power switching it is used for. In low-side switching applications, the device is used to switch the voltage between the load and the source by controlling the gate voltage. In high-side switching applications, the device is used to control the current flow between the load and the source by controlling the current flowing through the MOSFET. In either type of application, the STD16N65M2 is capable of switching between the full load and the open load, depending on the gate voltage or the amount of current applied to the device.
Due to its versatile features and impressive performance specifications, the STD16N65M2 is a popular choice for high-side and low-side switching applications. It offers excellent reliability, efficient switching, and optimal thermal characteristics, making it a robust and powerful solution for embedded systems, power switching, and more.
The specific data is subject to PDF, and the above content is for reference
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STD16N65M2 Datasheet/PDF