
Allicdata Part #: | 497-4100-2-ND |
Manufacturer Part#: |
STD100NH02LT4 |
Price: | $ 0.81 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 24V 60A DPAK |
More Detail: | N-Channel 24V 60A (Tc) 100W (Tc) Surface Mount DPA... |
DataSheet: | ![]() |
Quantity: | 7500 |
1 +: | $ 0.81000 |
10 +: | $ 0.78570 |
100 +: | $ 0.76950 |
1000 +: | $ 0.75330 |
10000 +: | $ 0.72900 |
Vgs(th) (Max) @ Id: | 1.8V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 100W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3940pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 84nC @ 10V |
Series: | STripFET™ II |
Rds On (Max) @ Id, Vgs: | 4.8 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 60A (Tc) |
Drain to Source Voltage (Vdss): | 24V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The STD100NH02LT4 is a silicon N-channel MOSFET developed by STMicroelectronics. It features an advanced high voltage technology, a low on-state resistance, and a fast switching capability. This makes it ideal for high speed switching applications in both consumer electronics and industrial applications.
Application Fields
STD100NH02LT4 is a popular choice for high-speed switching applications such as power conversion, motor control, and telecom applications. The device is also suitable for audio, automotive, and consumer applications.
In terms of power conversion, the MOSFET can be used in power factor correction (PFC), DC/DC converters, or AC/DC converters. It is also suitable for motor control applications such as switched mode power supplies, electric vehicles, and motor control systems. For telecom applications, this device can be found in systems such as cellular base stations and high-speed data transmission systems.
Working Principle
At its simplest, the MOSFET is a three-terminal device. It consists of a source terminal, a drain terminal, and a gate terminal. The source and drain terminals are connected to the power supply. The gate terminal is connected to a control signal. When the control signal is applied, the MOSFET will turn on, allowing current to flow from the source to the drain. When the control signal is removed, the MOSFET will turn off, blocking any current flow.
The STD100NH02LT4 uses a depletion-mode MOSFET to ensure fast switching. In this mode, the transistor will quickly switch from on-state to off-state when a low-voltage control signal is applied to the gate. This ensures fast response times and low power consumption.
The device also features a self-heating structure. This structure helps the MOSFET reduce its on-state resistance and power consumption. The self-heating also helps the device maintain a high operating temperature, making it ideal for high temperature applications.
The STD100NH02LT4 has an operating voltage range of 0V to 100V and a maximum drain-source voltage of 100V. It is also capable of handling a maximum current of 8A. The device has a low on-state resistance of 0.020 ohms and a high power rating of 1.5W.
Overall, the STD100NH02LT4 is an ideal solution for high-speed switching applications. Its advanced high voltage technology, low on-state resistance and fast switching capability make it suitable for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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