| Allicdata Part #: | STD10LN80K5-ND |
| Manufacturer Part#: |
STD10LN80K5 |
| Price: | $ 0.92 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | MOSFET N-CHANNEL 800V 8A DPAK |
| More Detail: | N-Channel 800V 8A (Tc) 110W (Tc) Surface Mount DPA... |
| DataSheet: | STD10LN80K5 Datasheet/PDF |
| Quantity: | 408 |
| 1 +: | $ 0.92000 |
| 10 +: | $ 0.89240 |
| 100 +: | $ 0.87400 |
| 1000 +: | $ 0.85560 |
| 10000 +: | $ 0.82800 |
| Vgs(th) (Max) @ Id: | 5V @ 100µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | DPAK |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 110W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 427pF @ 100V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 10V |
| Series: | MDmesh™ K5 |
| Rds On (Max) @ Id, Vgs: | 630 mOhm @ 4A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 8A (Tc) |
| Drain to Source Voltage (Vdss): | 800V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The STD 10LN80K5 is a single-packaged N-channel field-effect transistor (FET) designed for low-noise, low-voltage applications. This FET combines high transconductance and low noise figures, making it ideal for a variety of applications including high-frequency switching, audio amplifier output stages and low-power logic circuits. The STD 10LN80K5 is a low-noise JFET, meaning that it has a lower noise figure than traditional JFETs.
The STD 10LN80K5 is a depletion-mode device that features an onboard source-drain series resistance of 5Ω. It utilizes a single gate terminal, which is typically connected to ground to turn the device on. Depletion-mode FETs are commonly used in audio amplifier output stages and other low-noise applications that require high-frequency switching. The STD 10LN80K5 also features a current rating of 4A and a power dissipation of 14W, making it suitable for higher power applications.
The working principle of the STD 10LN80K5 is based on the electrostatic control of electric current. This means that the electrical current that flows through the device is directly proportional to the voltage applied to the gate terminal. When the gate voltage is increased, the current increases, and when the gate voltage is lowered, the current decreases. This makes the STD 10LN80K5 a highly efficient transistor and makes it suitable for a wide range of applications.
The STD 10LN80K5 can be used in a variety of applications, from audio amplifier output stages to high-frequency switching. Its low-noise characteristics make it ideal for low-power logic circuits and other high-frequency signal processing applications. The device operates best when the gate voltage is kept between -4V and +4V. This ensures that the current and voltage ratings are not exceeded and that the device operates efficiently and safely.
In conclusion, the STD 10LN80K5 is a single-packaged N-channel FET designed for low-noise, low-voltage applications. It utilizes the principle of electrostatic control and features a source-drain series resistance of 5Ω. The device is suitable for high-frequency switching, audio amplifier output stages and low-power logic circuits. Its low-noise characteristics make it ideal for noise-sensitive applications and its current and power ratings make it suitable for use in higher power applications. With the right application and voltage level, the STD 10LN80K5 can provide efficient and reliable operation.
The specific data is subject to PDF, and the above content is for reference
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STD10LN80K5 Datasheet/PDF