
STD12NF06LT4 Discrete Semiconductor Products |
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Allicdata Part #: | 497-2487-2-ND |
Manufacturer Part#: |
STD12NF06LT4 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 60V 12A DPAK |
More Detail: | N-Channel 60V 12A (Tc) 42.8W (Tc) Surface Mount DP... |
DataSheet: | ![]() |
Quantity: | 1292 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 42.8W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 350pF @ 25V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 10nC @ 5V |
Series: | STripFET™ II |
Rds On (Max) @ Id, Vgs: | 100 mOhm @ 6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The STD12NF06LT4 is an N-channel logic enhancement mode power field-effect transistor (FET) which is designed for medium power switch applications, such as in the switching power supply, battery protection circuit and DC-DC converter of notebook PC. This device features low on-state resistance and fast switching speeds, making it a great choice for applications that require high efficiency.
The STD12NF06LT4 is made up of two elements: the gate terminal and the drain terminal. The gate terminal acts as the control element of the device and is used to control the on-state and off-state of the device. The drain terminal is used to control the flow of current when the device is on, and to stop the flow of current when the device is in its off-state.
When the gate voltage potential is increased to a certain level, the device turns on. This is the device\'s logic enhancement mode, where the on-state resistance is low and the current is allowed to flow through the device. When the gate voltage is lowered, the device turns off. The device does not need any extra power to operate as the control signal for this device is supplied by the gate terminal.
The STD12NF06LT4 has a wide variety of applications in various fields as it can be easily included into integrated circuits. It can be used in amplifiers, power converters, power amplifiers, power sources, switching regulators, controllers, and load switches. Additionally, it is also suitable for use in mobile phones and automotive applications, as it can be used for high frequency switching applications.
The device is also suitable for use in high current, low voltage applications, as it can operate at extremely low temperatures. This makes the device an ideal choice for applications where high power and thermal requirements are necessary. Furthermore, its fast switching times and low on-state resistance makes it an ideal choice for applications where high efficiency is needed.
The STD12NF06LT4 is designed to have low gate charge and low gate threshold voltage, so that it can be easily switched on and off as needed. Additionally, the device can handle high drain current, making it ideal for high frequency switching applications. Furthermore, its wide operating temperature range, low power consumption, and high immunity to noise make it suitable for use in a wide variety of applications.
In summary, the STD12NF06LT4 is an N-channel logic enhancement mode power field-effect transistor with low on-state resistance and fast switching speed. It can be used in a wide variety of applications, including power supplies, amplifiers, power amplifiers, power sources, switching regulators, controllers, and load switches. It is particularly suitable for high current, low voltage applications, and its low gate charge, low gate threshold voltage, high current handling, and wide operating temperature range make it suitable for use in a variety of applications.
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