
Allicdata Part #: | STD13NM50N-ND |
Manufacturer Part#: |
STD13NM50N |
Price: | $ 0.60 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 500V DPAK |
More Detail: | |
DataSheet: | ![]() |
Quantity: | 1000 |
2500 +: | $ 0.53794 |
Series: | * |
Part Status: | Active |
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A Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is a type of transistor that is used to provide signals to various electronic systems. The STD13NM50N is one such MOSFET. This transistor is capable of very high current and voltage ratings, and is often used in applications such as power switching and motor control. In this article, we\'ll explore the application field and working principle of the STD13NM50N, and how it can be used in various electronics projects.
The STD13NM50N is a N-channel, enhancement-mode MOSFET. This type of MOSFET is a voltage-controlled device, meaning that it can be used to control a large amount of current or voltage with just a small amount of control voltage. This makes it ideal for a number of applications, such as motor control, power switching, and power flow control. The STD13NM50N is capable of handling up to 500 volts and 13 amps of continuous current.
The STD13NM50N is most commonly used in motor control applications. It is able to control the speed and direction of a motor, and can also be used to switch it on or off when needed. The MOSFET can be used in numerous other applications, including power switching, power flow control, and voltage regulation. It can also be used to switch high-voltage signals, and is often used in the design of power amplifiers.
The working principle of the MOSFET is based on the electrostatic field between the Gate and Drain-Source terminals. When a control voltage is applied to the Gate terminal, it forms an electrostatic field that modifies the conductivity of the channel between the Drain and Source. This change in conductivity allows current to flow between the Drain and Source terminals. By adjusting the Gate voltage, the amount of current flowing between the Drain and Source can be controlled.
The Gate-Source voltage (VGS) is the most important parameter when using the STD13NM50N. This voltage must be carefully controlled, as it determines the amount of current that can flow through the transistor. The Gate-Source voltage will also determine the transconductance (or gain) of the device, which is the ratio of current flowing from Source to Drain over the voltage applied to the Gate.
The Drain-Source voltage (VDS) is also an important parameter to consider. This voltage determines the amount of power that can be handled by the transistor. The Drain-Source voltage must be kept within the specified operating parameters in order to ensure proper operation of the transistor.
Overall, the STD13NM50N is an excellent choice for a wide range of applications. It has very high current and voltage ratings, allowing it to handle a wide range of signals and power levels. It is also capable of controlling a large amount of current with a small amount of control voltage. This makes it ideal for use in power switching, motor control, and voltage regulation applications. This article has explored the application field and working principle of the STD13NM50N, which should provide some insight into the various applications this MOSFET can be used for in your next electronics project.
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