STF40N65M2 Allicdata Electronics
Allicdata Part #:

497-15536-5-ND

Manufacturer Part#:

STF40N65M2

Price: $ 3.72
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 650V 32A TO220FP
More Detail: N-Channel 650V 32A (Tc) 25W (Tc) Through Hole TO-2...
DataSheet: STF40N65M2 datasheetSTF40N65M2 Datasheet/PDF
Quantity: 1000
1 +: $ 3.38310
50 +: $ 2.71744
100 +: $ 2.47590
500 +: $ 2.00485
1000 +: $ 1.69084
Stock 1000Can Ship Immediately
$ 3.72
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FP
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 25W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2355pF @ 100V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 56.5nC @ 10V
Series: MDmesh™ M2
Rds On (Max) @ Id, Vgs: 99 mOhm @ 16A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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Field-effect transistors, more commonly known as FETs, are a type of semiconductor device that is utilized in a wide range of applications. The STF40N65M2 is a popular N-channel FET that is often used in switching, amplification, and protection applications. This article will discuss the working principle, application field, and features of the STF40N65M2.

The basic operation of a field-effect transistor is based on the principle of majority carriers and minority carriers. A FET is constructed with three terminals: the gate, source, and drain. The gate terminal is insulated from the semiconductor material of the device. A voltage applied to the gate terminal creates an electric field that changes the conductivity of the semiconductor channel between the source and drain. This in turn allows the flow of current through the channel. The current flow is governed by the voltage applied to the gate.

The STF40N65M2 FET is an N-channel device, meaning that the majority carriers are negative electrons, with an on-state resistance of 0.6 ohm. It is designed for use in a wide range of applications, from power conversion and motor control to battery protection and signal conditioning. Its features include low on-state resistance, low drain-source capacitance, fast reverse recovery time, and low gate charge.

In power conversion applications, the STF40N65M2 is often used as part of a power factor correction circuit. The FET serves to control the amount of current that is supplied to the power conversion circuit, providing improved efficiency and power factor. In motor control applications, the FET can be used to regulate the current that is supplied to the motor, allowing for more precise speed control.

The STF40N65M2 can also be used for battery protection, providing protection against overcurrent conditions and short circuits. When an overcurrent situation is detected, the FET can be used to quickly shut off the power supply, protecting the battery from any further damage. In signal conditioning applications, the FET can be used to regulate the current flowing to the signal processing circuit, helping to improve the accuracy and reliability of the signal conditioning.

The STF40N65M2 is a versatile and reliable FET that is well-suited to many different applications. Its low on-state resistance, fast reverse recovery time, and low gate charge make it an ideal choice for power conversion, motor control, battery protection, and signal conditioning applications. The device can be used in a wide range of systems, from relatively simple power supplies to complex power management systems.

The specific data is subject to PDF, and the above content is for reference

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