Allicdata Part #: | 497-12579-5-ND |
Manufacturer Part#: |
STF4N52K3 |
Price: | $ 0.95 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 525V 2.5A TO-220FP |
More Detail: | N-Channel 525V 2.5A (Tc) 20W (Tc) Through Hole TO-... |
DataSheet: | STF4N52K3 Datasheet/PDF |
Quantity: | 1936 |
1 +: | $ 0.85680 |
10 +: | $ 0.76167 |
100 +: | $ 0.60171 |
500 +: | $ 0.46665 |
1000 +: | $ 0.36841 |
Vgs(th) (Max) @ Id: | 4.5V @ 50µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220FP |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 20W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 334pF @ 100V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 11nC @ 10V |
Series: | SuperMESH3™ |
Rds On (Max) @ Id, Vgs: | 2.6 Ohm @ 1.25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.5A (Tc) |
Drain to Source Voltage (Vdss): | 525V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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As modern electronic devices become more powerful and sophisticated, the need for transistors that can operate at higher speeds, with more efficient power management, and with greater functionality increases. The STF4N52K3 is a field-effect transistor (FET) that provides all of these benefits and more.A FET is a type of transistor that relies on an electric field to control the flow of electrical current. A FET is made up of three main parts - the source, gate, and drain. The source is where the electrical current enters the transistor, the gate controls the flow of electrical current through the transistor, and the drain is where the electrical current leaves the transistor. The STF4N52K3 is a type of single FET that is designed to provide high-speed switching, low power consumption and excellent control of the electrical current flowing through the device. It has a low input impedance, a high threshold voltage, and low gate-drain capacitance. This makes the STF4N52K3 an ideal choice for a wide range of applications and working environments.The STF4N52K3 can be used in a variety of applications, but is particularly suited to ones that require high speed and efficient power management. For example, it is ideal for applications such as signal processing, power conversion and RF switching.The STF4N52K3 works by allowing a specified voltage to be applied to the gate of the device. This causes the drain current, which is the electrical current that flows through the FET, to be controlled. This is known as the Drain-Source voltage (Vds). Depending on the size and type of FET, the current that can be controlled using this method can range from a few hundred milliamps to over an ampere.The STF4N52K3 works on the same principle as other FETs. However, it takes advantage of its low gate-drain capacitance to enable high-speed switching, making it ideal for applications that require fast response times.The STF4N52K3 is a great choice for those looking for a power-efficient, high-speed transistor that can be used in a wide range of applications. It is compact, reliable, and capable of providing excellent control of the electrical current, making it a perfect fit for any task.
The specific data is subject to PDF, and the above content is for reference
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