| Allicdata Part #: | 497-15887-5-ND |
| Manufacturer Part#: |
STF42N60M2-EP |
| Price: | $ 7.81 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | MOSFET N-CH 600V 34A EP TO220FP |
| More Detail: | N-Channel 600V 34A (Tc) 40W (Tc) Through Hole TO-2... |
| DataSheet: |  STF42N60M2-EP Datasheet/PDF |
| Quantity: | 6536 |
| 1 +: | $ 7.10010 |
| 10 +: | $ 6.39009 |
| 100 +: | $ 5.25407 |
| 500 +: | $ 4.40206 |
| Vgs(th) (Max) @ Id: | 4.75V @ 250µA |
| Package / Case: | TO-220-3 Full Pack |
| Supplier Device Package: | TO-220FP |
| Mounting Type: | Through Hole |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 40W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2370pF @ 100V |
| Vgs (Max): | ±25V |
| Gate Charge (Qg) (Max) @ Vgs: | 55nC @ 10V |
| Series: | MDmesh™ M2-EP |
| Rds On (Max) @ Id, Vgs: | 87 mOhm @ 17A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 34A (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The STF42N60M2-EP is a field-effect transistor (FET), more specifically a metal-oxide-semiconductor FET (MOSFET). FETs are normally-off transistors, meaning current only flows when a voltage is applied to the gate of the transistor, otherwise it does not. This property makes them perfect for electronic switch applications, as well as for sophisticated control circuits such as digital to analog converters. The STF42N60M2-EP is an N-channel Enhancement Mode MOSFET, meaning that when voltage is applied to the gate, it will conduct current between the source and the drain.
The STF42N60M2-EP has a number of applications as a result of its properties and design. It is mainly used in switch mode power supplies as well as motor controllers, since it has very fast switching times (260nsec) and a low gate-source threshold voltage (<3 volts). The STF42N60M2-EP can also be used in power amplifiers, since the on-resistance is low, and its fast switching times make it suitable for use in Class D amplifiers. Another use of the STF42N60M2-EP is in DC-DC converters, since the low RDSon helps to reduce power losses.
The working principle of the STF42N60M2-EP involves two important aspects of the MOSFET physics - the drain to source current and the gate to source voltage. The drain to source current is the amount of current that can flow through the MOSFET when the gate to source voltage is applied. The gate to source voltage is the voltage that must be applied to the gate of the MOSFET in order to turn it on, or allow current to flow between the drain and the source. The STF42N60M2-EP is designed such that when a voltage of 3 V or more is applied to the gate, current will begin to flow between the drain and the source. The higher the gate to source voltage, the greater the drain to source current will be. This property is known as the drain current to gate voltage relationship and it is what makes the STF42N60M2-EP an effective switch.
The STF42N60M2-EP is a versatile device, offering a range of options for a variety of applications. It is important to choose the correct device for the specific application in order to ensure the best performance. The device is also widely available and easy to use, making it a great choice for many electronics projects.
The specific data is subject to PDF, and the above content is for reference
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