STF4NK50ZD

Vgs(th) (Max) @ Id:	4.5V @ 50µA
Package / Case:	TO-220-3 Full Pack
Supplier Device Package:	TO-220FP
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	20W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	310pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	12nC @ 10V
Series:	SuperMESH™
Rds On (Max) @ Id, Vgs:	2.7 Ohm @ 1.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	3A (Tc)
Drain to Source Voltage (Vdss):	500V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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STF4NK50ZD is a type of enhancement mode N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor), which is also known as a vertical MOSFET. It is an insulated-gate field-effect transistor (IGFET) that has a gate-to-source voltage (Vgs) that is negative. It is used in many applications such as switching, signal amplification and power control.The STF4NK50ZD’s key features are low On-resistance (Rdson) and low intrinsic capacitance. These features let the STF4NK50ZD be capable of sustaining high switching speeds and high signal transmission rates. This device is rated for a maximum drain current of 11 A and a maximum drain-source voltage of 200 V. Under normal functioning, the STF4NK50ZD functions as a voltage-dependent resistor. When the voltage across its gate and source is negative, the device can be seen as an open circuit due to the lack of electrons being supplied to the drain. When the voltage is positive, it is said to be in the ON state with the electrons flowing and causing current to the drain.A schematic diagram of the device is shown below:The application of the STF4NK50ZD includes household appliances, industrial equipment, telecommunications, and automotive electronic applications. In household appliances such as air conditioners and refrigerators, the STF4NK50ZD devices are typically used as switching devices for controlling the power to the respective appliances. It can also be used for controlling the flow of current in the high and low side circuits that govern the amount of power supplied to the major load in appliances. Due to its low On-resistance, STF4NK50ZD is often used in high frequency power conversion circuits as a switching device. STF4NK50ZD can be used together with its negative version, STU4NK50ZD, for high-level power conversion. For example, STF4NK50ZD can be used as the high-side MOSFET and STU4NK50ZD as the low-side MOSFET in a buck converter circuit. This pairing of devices will help to reduce power loss and increase the efficiency of the power converter circuit. The STF4NK50ZD is also used in automotive electronics such as the fuel injection system, light dimmer systems and cruise control systems. STF4NK50ZD devices can be used to control the flow of current in automotive controllers for the respective systems, responding to voltage and current input from the sensor units of the system. In telecommunications, STF4NK50ZD is mostly used in power amplifiers, switching circuits and power management systems. These devices can be used as switching devices or low-level amplification circuits. The usage of STF4NK50ZD in telecoms helps to reduce noise interferences caused by improper switching systems. In conclusion, the STF4NK50ZD is a type of enhancement mode N-channel MOSFET that is used in various applications such as household appliances, industrial electronics, telecommunications and automotive electronics. It boasts features such as low On-resistance and low intrinsic capacitance, making it useful for high-frequency switching and power conversion.

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