Allicdata Part #: | 497-17292-ND |
Manufacturer Part#: |
STF4LN80K5 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 800V 3A TO220FP |
More Detail: | N-Channel 800V 3A (Tc) 20W (Tc) Through Hole TO-22... |
DataSheet: | STF4LN80K5 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 100µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220FP |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 20W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 122pF @ 100V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 3.7nC @ 10V |
Series: | MDmesh™ K5 |
Rds On (Max) @ Id, Vgs: | 2.6 Ohm @ 1A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 3A (Tc) |
Drain to Source Voltage (Vdss): | 800V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The STF4N80K5 is a N-channel enhancement mode MOSFET transistor manufactured by STMicroelectronics. The N-channel MOSFET offers low-on-resistance, excellent switching performance, good energy efficiency, and wide load range. This makes it an ideal choice for power supply design, high-side switching applications, and other low-voltage power management applications. Due to its unique performance characteristics, the STF4N80K5 is suitable for use in a wide range of applications, from high-speed switching and switching power supplies to low-voltage linear regulation and dynamic braking.
The STF4N80K5 is an enhancement-mode MOSFET, which means that its drain current is proportional to the gate voltage. It operates in two different modes, depending on the gate-source voltage. When the VGS is below a certain threshold voltage, the MOSFET is in linear mode, and the drain current is proportional to the gate-source voltage. When the VGS is above the threshold voltage, the MOSFET is in saturation mode, and the drain current increases exponentially with the gate-source voltage.
The STF4N80K5 has a low on-resistance rating of 8.2 ohms, making it an excellent choice for high power switching applications. The low on-resistance enables the MOSFET to turn on more quickly, making it suitable for high-frequency switching. Additionally, the low on-resistance reduces the power losses associated with operating the MOSFET, making it an energy-efficient device. The low gate-source capacitance also reduces switching losses, further increasing efficiency.
The STF4N80K5 also has a high maximum voltage rating of 500V, making it suitable for use in high-voltage applications. Additionally, it can handle a maximum drain current of 5.35A, which makes it ideal for applications that require high current. The MOSFET also has a fast switching speed of 108ns, which makes it suitable for use in high-speed switching applications.
The STF4N80K5 is widely used in power supplies and other power management applications, due to its low resistance and fast switching time. The MOSFET is also commonly used in high-side switching applications, such as isolated DC-DC converters and solid state relays. Additionally, the STF4N80K5 can be used in low-voltage linear regulation applications, such as power factor correction circuits, and in dynamic braking applications, such as motor control systems.
The STF4N80K5 MOSFET is an excellent choice for a wide range of power supply design, switching power supplies, and power management applications. The MOSFET has a low on-resistance rating, a high voltage rating, a fast switching time, and a wide load range, which makes it a very versatile device. It is also energy efficient, making it suitable for applications that need to minimize power losses. The low gate-source capacitance also reduces switching losses and further increases efficiency.
The specific data is subject to PDF, and the above content is for reference
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